S4D20120A

S4D20120A SMCDIODE | Alldatasheet

Document overview

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Technical content

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G S4D20120A S4D20120H S4D20120G 1200V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

S4D20120A S4D20120G S4D20120H TO-220AC (TO-220-2) D2PAK (TO-263-2) TO-247AC (TO-247-2)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 1200V 20A diode is high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D20120A/S4D20120H/S4D20120G are ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G * Pulsewidth<300µs, dutycycle<2% Maximum Ratings Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 1200 V AverageRectifiedForwardCurrent IF(AV)1 @Tc=25°C 57 A IF(AV)2 @Tc=150°C 20 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,Tc=25°C 140 A IFRM2 10ms,HalfSinepulse,Tc=110°C 110 A PeakOneCycleNon-Repetitive Surge Current IFSM1 10ms,HalfSinepulse, Tc=25°C 240 A IFSM2 10ms,HalfSinepulse, Tc=110°C 195 A Non-RepetitivePeakForward Surge Current IF,Max1 10μs.Pulse,Tc=25℃ 1150 A IF,Max2 10μs.Pulse,Tc=110℃ 950 A PowerDissipation Ptot1 Tc=25℃ 245.9 W Ptot2 Tc=110℃ 106.6 W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @20A,Pulse,TJ =25C 1.5 1.8 V VF2 @20A,Pulse,TJ =175C 2.2 3.0 V ReverseCurrent* IR1 @VR =ratedVR TJ =25C 1 25 uA IR2 @VR =ratedVR TJ =175C 10 150 uA JunctionCapacitance CT VR=0V,Tj=25℃,f=1MHz 1620 - pF ReverseRecoveryCharge Qc IF =20A,di/dt=200A/μs VR=800V,TJ =25°C 124.89 - nC CapacitanceStoredEnergy EC VR =800V,TJ =25°C 64.20 - μJ Characteristics Symbol S4D20120A S4D20120H S4D20120G Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C TypicalThermalResistanceJunctiontoCase RθJC 0.6 0.61 0.6 C/W Thermal-Mechanical Specifications:

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Device Package Shipping S4D20120A TO-220AC(TO-220-2) 50pcs/tube S4D20120H TO-247AC(TO-247-2) 25pcs/tube S4D20120G D2PAK(TO-263-2) 800pcs/reel S4D20120GTR D2PAK(TO-263-2) 800pcs/reel

Ordering Information

Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G Fig.5-Power Derating Fig.6-Total Capacitance Charge vs. Reverse Voltage Fig.3-Capacitance vs. Reverse Voltage Fig.4-Current Derating

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G Marking Diagram Tube Specification WhereXXXXX isYYWWL S4D =Device Type A/H/G =Packagetype 20 =ForwardCurrent (20A) 120 =Reverse Voltage(1200V) SSG =SSG YY =Year WW =Week L = Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0 TO-247AC(TO-247-2)TO-220AC(TO-220-2) Fig.7-Capacitance Stored Energy

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G Carrier Tape & Reel Specification D2PAK(TO-263-2) SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AC(TO-220-2) Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 - Q 2.54 - 3.43

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G Mechanical Dimensions TO-247AC(TO-247-2) SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.00 5.20 A1 2.20 2.41 2.61 A2 1.90 2.00 2.10 b 1.10 1.20 1.35 b1 1.80 2.00 2.20 c 0.50 0.60 0.75 D 20.30 21.00 21.20 D1 16.58 D2 1.17 E 15.60 15.80 16.00 E1 14.02 E2 5.00 E3 2.50 e 5.44 L 19.42 19.92 20.42 L1 4.13 P 3.50 3.60 3.70 P1 7.1 7.19 7.40 P2 2.50 Q 5.80 S 6.05 6.15 6.25 T 10.00 U 6.20 Mechanical Dimensions D2PAK(TO-263-2) Symbol Dimensionsinmillimeters Min. Max. A 4.06 4.83 A1 0 0.26 b 0.51 0.99 b1 1.14 1.78 c 0.31 0.74 c1 1.14 1.65 D 8.38 9.65 D1 6.4 E1 6.22 E2 9.65 10.67 e 2.54BSC H 14.6 15.88 L 1.78 2.8 L1 - 1.68 L2 - 2.2 L3 0.255BSC Θ 0 8°

Data Sheet N2367, REV.H  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D20120A S4D20120H S4D20120G DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.