S4D05120A SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G S4D05120A S4D05120E S4D05120G 1200V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

S4D05120A S4D05120E S4D05120G TO-220AC (TO-220-2) DPAK (TO-252-2) D2PAK (TO-263-2)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection The 1200V 5A diodes are high voltage Schottky rectifiers that have very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D05120A/S4D05120E/S4D05120G are ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Maximum Ratings Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VDC 1200 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 16 A IF(AV)2 Tc=151°C 5 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,TC=25°C 30 A IFRM2 10ms,HalfSinepulse,TC=110°C 20 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM1 10ms,HalfSinepulse,TC=25°C 70 A IFSM2 10ms,HalfSinepulse,TC=110°C 48 A Non-RepetitivePeakForwardSurgeCurrent IF,Max1 10μs.Pulse,TC=25℃ 600 A IF,Max2 10μs.Pulse,TC=110℃ 500 A PowerDissipation Ptot1 TC=25℃ 90.6 W Ptot2 TC=110℃ 39.4 W

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G * Pulsewidth<300µs, dutycycle<2% Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @5A,Pulse,TJ =25C 1.65 1.8 V VF2 @5A,Pulse,TJ =175C 2.2 3.0 V ReverseCurrent* IR1 @VR =ratedVR TJ =25C 4 50 uA IR2 @VR =ratedVR TJ =175C 10 100 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 296 - pF ReverseRecoveryCharge Qc IF =5A,di/dt=200A/μs VR =800V,TJ =25°C 22.80 - nC Capacitance Stored Energy EC VR =800V,TJ =25°C 11.71 - μJ Characteristics Symbol S4D05120A S4D05120E S4D05120G Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C Typical Thermal Resistance Junction to Case RqJC 1.7 1.5 1.65 C/W Thermal-Mechanical Specifications:

Ordering Information

S4D05120A TO-220AC(TO-220-2) 50pcs/tube S4D05120E DPAK(TO-252-2) 2500pcs/reel S4D05120ETR DPAK(TO-252-2) 2500pcs/reel S4D05120G D2PAK(TO-263-2) 800pcs/reel S4D05120GTR D2PAK(TO-263-2) 800pcs/reel

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Fig.5-Capacitance Stored Energy Fig.6-Power Derating Fig.7-Current Derating

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Marking Diagram Tube Specification(TO-220-2) Carrier Tape & Reel Specification DPAK(TO-252-2) SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30 WhereXXXXX isYYWWL S4D =Device Type A/E/G =Packagetype 05 =ForwardCurrent (5A) 120 =Reverse Voltage(1200V) SSG =SSG YY =Year WW =Week L = Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Carrier Tape & Reel Specification D2PAK(TO-263-2) SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AC(TO-220-2) Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E - - 1.78 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 -

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G Mechanical Dimensions DPAK(TO-252-2) SYMBOL Dimensions in millimeters Min. Typ. Max. A 2.18 - 2.39 A1 - - 0.13 b 0.64 - 0.89 c 0.46 - 0.89 D 6.35 - 6.73 D1 4.95 - 5.46 D2 4.32 - - E 5.97 6.1 6.22 e 2.29BSC L 9.4 - 10.41 L1 2.90REF. L2 1.4 1.52 1.78 L3 1.60REF. L4 - - 1.02 Φ 1.1 - 1.3 Θ 0° - 10° V 5.21 - - Mechanical Dimensions D2PAK(TO-263-2) Symbol Dimensionsinmillimeters Min. Max. A 4.06 4.83 A1 0 0.26 b 0.51 0.99 b1 1.14 1.78 c 0.31 0.74 c1 1.14 1.65 D 8.38 9.65 D1 6.4 E1 6.22 E2 9.65 10.67 e 2.54BSC H 14.6 15.88 L 1.78 2.8 L1 - 1.68 L2 - 2.2 L3 0.255BSC Θ 0 8°

Data Sheet N2365, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D05120A S4D05120E S4D05120G DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.