S4D02120A

S4D02120A SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F S4D02120A/S4D02120E/S4D02120F 1200V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

S4D02120A S4D02120E S4D02120F TO-220AC (TO-220-2) DPAK (TO-252-2) ITO-220AC (TO-220-F2)  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 1200V 2A diode is high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D02120A/S4D02120E/S4D02120F are ideal for energy sensitive, high frequency applications in challenging environments.

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Maximum Ratings Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 1200 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 9 A IF(AV)2 Tc=160°C 2 A PeakOneCycleNon-RepetitiveSurge Current IFSM1 10ms,HalfSinepulse, Tc=25°C 27 A IFSM2 10ms,HalfSinepulse, Tc=110°C 25 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,Tc =25°C 16 A IFRM2 10ms,HalfSinepulse,Tc =110°C 14 A Non-RepetitivePeakForwardSurge Current IF,Max1 10μs.Pulse,Tc=25℃ 200 A IF,Max2 10μs.Pulse,Tc=110℃ 160 A Power Dissipation Ptot1 Tc=25℃ 60 W Ptot2 Tc=110℃ 26 W

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F * Pulsewidth<300µs, dutycycle<2% Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @2A,Pulse,TJ =25C 1.4 1.8 V VF2 @2A,Pulse,TJ =175C 2.0 2.5 V ReverseCurrent* IR1 @VR =ratedVR TJ =25C 1 10 uA IR2 @VR =ratedVR TJ =175C 2 40 uA JunctionCapacitance CT VR=0V,Tj=25℃,f=1MHz 160 - pF ReverseRecoveryCharge Qc IF =2A,di/dt=200A/μs VR=800V,TJ =25°C 12.33 - nC CapacitanceStoredEnergy EC VR =800V,TJ =25°C 6.33 - μJ Thermal-Mechanical Specifications: Characteristics Symbol S4D02120A S4D02120E S4D02120F Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C TypicalThermalResistanceJunctiontoCase RqJC 2.4 2.5 8.6 C/W

Ordering Information

S4D02120A TO-220AC(TO-220-2) 50pcs/tube S4D02120E DPAK(TO-252-2) 2500pcs/reel S4D02120ETR DPAK(TO-252-2) 2500pcs/reel S4D02120F ITO-220AC(TO-220MF-2L) 50pcs/tube

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Fig.5-Capacitance Stored Energy Fig.6-Power Derating Fig.7-Current Derating

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Marking Diagram Tube Specification(TO-220-2/TO-220MF-2L) Carrier Tape & Reel Specification DPAK(TO-252-2) SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30 WhereXXXXX isYYWWL S4D =Device Type A/E/F =Package type 02 =ForwardCurrent (2A) 120 =Reverse Voltage(1200V) SSG =SSG YY =Year WW =Week L = Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Mechanical Dimensions TO-220AC(TO-220-2) Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 - Q 2.54 - 3.43 Mechanical Dimensions DPAK(TO-252-2) SYMBOL Dimensions in millimeters Min. Typ. Max. A 2.18 - 2.39 A1 - - 0.13 b 0.64 - 0.89 c 0.46 - 0.89 D 6.35 - 6.73 D1 4.95 - 5.46 D2 4.32 - - E 5.97 6.1 6.22 e 2.29BSC L 9.4 - 10.41 L1 2.90REF. L2 1.4 1.52 1.78 L3 1.60REF. L4 - - 1.02 Φ 1.1 - 1.3 Θ 0° - 10° V 5.21 - -

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F Mechanical Dimensions ITO-220AC(TO-220MF-2L) Symbol Dimensions in millimeters Min. Typical Max. A 4.50 4.70 4.90 A1 2.34 2.54 2.74 A2 0.70 A3 2.56 2.76 2.96 b 0.70 0.80 0.95 b1 1.28 c 0.45 0.50 0.65 D 15.67 15.87 16.07 D1 7.70 D2 9.12 E 9.96 10.16 10.36 E1 8.00 e1 5.08 F 2.1 G 7 H1 0.81 L 12.48 12.98 13.20 L1 2.93 Q 3.10 3.30 3.50 e1 5° 02 45° 03 5° e4 5°

Data Sheet N2369, REV. F  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D02120A S4D02120E S4D02120F DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.