S4004VS2TP LITTELFUSE | Alldatasheet
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209©2010 Littelfuse, Inc Revised: July 29, 2010 09:54 AM T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Sxx04xSx Series
4 Amp Sensitive SCRs
4.0A SCRs Sxx04xSx Series
Description
Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches, and microprocessors. Features & Benefits t3P)4DPNQMJBOU t(MBTToQBTTJWBUFE junctions t7PMUBHFDBQBCJMJUZVQ UP7 t4VSHFDBQBCJMJUZVQUP 30 A Schematic Symbol Main Features Symbol Value Unit IT(RMS) 4A 7DRM7RRM 400 to 600 7 I(5 50 to 500 μA Absolute Maximum Ratings Symbol Parameter Test Conditions Value Unit IT(RMS) RMS on-state current T C = 95°C 4 A I5 "7 Average on-state current T C = 75°C 2.5 A ITSM Peak non-repetitive surge current TJOHMFIBMGDZDMF G TJ (initial) = 25°C 25 A TJOHMFIBMGDZDMF G TJ (initial) = 25°C 30 I2tI 2U7BMVFGPSGVTJOH tp = 8.3 ms 3.7 A 2s di/dt Critical rate of rise of on-state current G 5J = 110°C 50 A/μs I(. Peak gate current T J = 110°C 1 A P( "7 Average gate power dissipation T J = 110°C 0.1 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 110 °C
Applications
Typical applications are capacitive discharge systems for strobe lights, nailers, staplers and gas engine ignition. Also controls for power tools, home/brown goods and white goods appliances. AK G
Revised: July 29, 2010 09:54 AM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Electrical Characteristics — (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Value UnitSxx04xS1 Sxx04xS2 I(5 3L = 100 8 MAX. 50 200 μA 7(5 MAX. 0.8 7 dv/dt 7D 7DRM; R(, = 1kΩ TYP . 8 7çT 7(% 7D 7DRM; RL = 3.3 k8; TJ = 110°C MIN. 0.2 7 7(3. I(3 = 10μA MIN. 6 7 I) IT = 20mA (initial); R(, = 1kohm MAX. 4 6 mA tq (1) MAX. 50 μs tgt I( = 2 x I(5; PW = 15μs; IT = 8A TYP . 3 4 μs Notes : xx = voltage, x = package (1) I T=2A; tp EWEU 7T EJEU "T Static Characteristics Symbol Test Conditions Value Unit 7TM Sxx04xSy IT = 8A; tp = 380 μs MAX. 1 .6 7 IDRM / IRRM 7DRM7RRM - R(, = 1kohm TJ = 25°C MAX. μA TJ = 110°C 100 /PUFYYPS[ WPMUBHF Y QBDLBHF Z TFOTJUJWJUZ Thermal Resistances Symbol Parameter Value Unit RR(J-C) Junction to case (AC) 4YY74Z 3.8 °C/W Sxx04DSy 3.0 RR(J-A) Junction to ambient 4YY74Z 85 °C/W Notes: xx = voltage, y = sensitivity
211©2010 Littelfuse, Inc Revised: July 29, 2010 09:54 AM T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Sxx04xSx Series 4.0A SCRs Figure 1: Normalized DC Gate T rigger Current vs. Junction T emperature Figure 2: Normalized DC Gate T rigger Voltage vs. Junction T emperature 0.0 1.0 2.0 3.0 4.0 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) Ratio of IGT / IGT(TJ = 25°C) Figure 5: On-State Current vs. On-State Voltage (T ypical) Figure 6: Power Dissipation (T ypical) vs. RMS On-State Current Figure 3: Normalized DC Holding Current vs. Junction T emperature Figure 4: Normalized DC Latching Current vs. Junction T emperature 0.0 0.5 1.0 1.5 2.0 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) Ratio of VGT / VGT(TJ = 25°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) Ratio of IH / IH(TJ = 25°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) Ratio of IL / IL(TJ = 25°C) TJ = 25°C Instantaneous On-state Voltage (v) – Volts Instantaneous On-state Current (iT) – Amps Sxx04VSy Sxx04DSy 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 RMS On-State Current [I T(RMS)] - (Amps) Average On-State Power Dissipation [PD(AV)] - (Watts) Sxx04VSy Sxx04DSy /PUFYYPS[ WPMUBHF Z TFOTJUJWJUZ
Revised: July 29, 2010 09:54 AM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Figure 7: Maximum Allowable Case T emperature vs. RMS On-State Current Figure 8: Maximum Allowable Case T emperature vs. Average On-State Current Figure 9: Maximum Allowable Ambient T emperature vs. RMS On-State Current Figure 10: Maximum Allowable Ambient T emperature vs. Average On-State Current Note: xx = voltage, y = sensitivity 100 105 110 115 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° Maximum Allowable Case T emperature (TC) - °C RMS On-State Current [IT(RMS)] - Amps Sxx04VSy Sxx04DSy 100 105 110 115 Maximum Allowable Case T emperature (TC) - °C Average On-State Current [IT(AVE)] - Amps CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° Sxx04VSy Sxx04DSy 100 120 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° FREE AIR RATING Maximum Allowable Ambient T emperature (TA) -°C RMS On-State Current [IT(RMS)] - Amps Sxx04VSy 100 120 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° FREE AIR RATINGSxx04VSy Maximum Allowable Ambient T emperature (TA) -°C Average On-State Current [IT(AVE)] - Amps Figure 11: Peak Repetitive Capacitor Discharge Current Figure 12: Peak Repetitive Sinusoidal Pulse Current 100 120 140 160 180 11 0 1 0 0 1 Hz 12 Hz 60 Hz Peak Discharge Current (ITM) -Amps Pulse Current Duration (tW) - μs ITRM tW 100 120 140 160 180 1 10 100 1 Hz 12 Hz 60 Hz Peak Discharge Current (I TM) - Amps Pulse Current Duration (tW) - μs ITM tW
213©2010 Littelfuse, Inc Revised: July 29, 2010 09:54 AM T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Sxx04xSx Series 4.0A SCRs 0.1 1.0 10.0 100.0 1 10 100 1000 Sxx04VSy Sxx04DSy Peak Surge (Non-repetitive) On-state Current (ITSM) – Amps Surge Current Duration -- Full Cycles Figure 13: Surge Peak On-State Current vs. Number of Cycles Figure 14: Simple T est Circuit for Gate T rigger Voltage and Current 4611-:'3&26&/$:)[4JOVTPJEBM LOAD: Resistive RMS On-State Current: [I T(RMS)]: Maximum Rated 7BMVFBU4QFDJmFE$BTF5FNQFSBUVSF Notes: (BUFDPOUSPMNBZCFMPTUEVSJOHBOEJNNFEJBUFMZ following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. /PUF77UP7EDNFUFS 7(57UP7EDNFUFS I(N"UPN"EDNJMMJBNNFUFS 3LQPUFOUJPNFUFS To measure gate trigger voltage and current, raise gate WPMUBHF 7(5 VOUJMNFUFSSFBEJOH7ESPQTGSPN7UP7 (BUFUSJHHFSWPMUBHFJTUIFSFBEJOHPO7(5KVTUQSJPSUP7 ESPQQJOH(BUFUSJHHFSDVSSFOU*(5 Can be computed from the relationship 7(5 I(5 = I(- ____ Amps 1000 where I(JTSFBEJOH JOBNQFSFT PONFUFSKVTUQSJPSUP7 dropping Note: I(5 may turn out to be a negative quantity (trigger current flows out from gate lead). If negative current occurs, I (5 value is not a valid reading. Remove 1 k resistor and use I( as the more correct I(5 value. This will occur on 12 μA gate products. Reset Normally-closed Pushbutton 6VDC D.U.T. 100 1 k (1%) 100 IGT IG IN4001 VGT /PUFYYPS[WPMUBHF Z TFOTJUJWJUZ
Revised: July 29, 2010 09:54 AM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Reflow Condition 1Co'SFFBTTFNCMZ Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) oTFDT Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) oTFDPOET Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) oTFDPOET Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Physical Specifications Environmental Specifications Test Specifications and Conditions AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours , R (, = 1kohms T emperature Cycling MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time T emperature/ Humidity EIA / JEDEC, JESD22-A101 IPVST 7%$¡$ 85% rel humidity High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Thermal Shock MIL-STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwelltime at each temperature; 10 sec (max) transfer time between temperature Autoclave EIA / JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E T erminal Finish 100% Matte Tin-plated Body Material 6-SFDPHOJ[FEFQPYZNFFUJOHnBNNBCJMJUZ DMBTTJmDBUJPO7 Lead Material Copper Alloy Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way UPXBSEFYUFOEJOHUIFPQFSBUJOHMJGFPGUIF5IZSJTUPS(PPE design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do
215©2010 Littelfuse, Inc Revised: July 29, 2010 09:54 AM T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Sxx04xSx Series 4.0A SCRs Dimensions — TO-251AA (V/I-Package) — V/I-PAK Through Hole Dimension Inches Millimeters Min Typ Max Min Typ Max AREA: 0.040 IN2TC MEASURING POINT GATE G I E D A B C F J H K L 5.28 .208 5.34 .210 Anode Cathode Anode P Q R S Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount Dimension Inches Millimeters Min Typ Max Min Typ Max M O N HJ L K .1 18 .063 1.60 .071 1.80 .264 6.71 .264 6.71 .181 4.60 GATE Anode Cathode Anode TC MEASURING POINT G I D E A B C F 5.28 .208 5.34 .210 : 0.040 IN2AREA P Q
Revised: July 29, 2010 09:54 AM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Gate Sensitivity Type Package 400V 600V 800V 1000V Sxx04DS1 X X 50μA Sensitive SCR TO-252 Sxx04DS2 X X 200μA Sensitive SCR TO-252 4YY74 X X 50μA Sensitive SCR TO-251 4YY74 X X 200μA Sensitive SCR TO-251 /PUFYY 7PMUBHF Packing Options Part Number Marking Weight Packing Mode Base Quantity Sxx04DSyTP Sxx04DSy 0.3g Tube 750 (75 per tube) Sxx04DSyRP Sxx04DSy 0.3g Embossed Carrier 2500 4YY74Z51 4YY74Z 0.4g Tube 750 (75 per tube) Note: xx = voltage, y = sensitivity TO-252 Embossed Carrier Reel Pack (RP) Specs 0.512 (13.0) Arbor Hole Diameter DC XXXXXX XXXXXX DC XXXXXX DC XXXXXX XX Gate Cathode Anode 0.63 (16.0) 0.157 (4.0) 0.64 (16.3) 12.99 (330.0) 0.524 (13.3) 0.315 (8.0) 0.059 DIA(1.5) * Cover tape XX XX Direction of Feed Dimensions are in inches (and millimeters). Part Numbering System Part Marking System DEVICE TYPE S: SCR PACKAGE TYPE V: TO-251 (V/I-Pak) D: TO-252 (D-Pak) CURRENT RATING 04: 4A VOLTAGE RATING 4: 400V 6: 600V SENSITIVITY & TYPE SS 160 04 V μ μAS1: 50 S2: 200 A S6004VS1 yxxxx TO-252AA – (D Package) TO-251AA – (V Package)
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