S3WB60 SHINDENGEN | Alldatasheet
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Technical content
600V 2.3A Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Bridge Diode OUTLINE DIMENSIONS RATINGS Square In-line Package SHINDENGEN Unit : mm Case : S3WBS3WB60
- Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40 ～150 ℃ Operating Junction Temperature Tj 150 ℃ Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=40℃ 2.3 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 120 A Current Squared Time I2t 1ms≦t＜10ms Ｔc=25℃ 60 A 2ｓ
- Electrical Characteristics (Tl=25℃) Item Symbol Conditions Ratings Unit Forward Voltage VF IF=2A, Pulse measurement, Rating of per diode Max.1.05 V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 μA Thermal Resistance θjl junction to lead Max.5.5 ℃/W θja junction to ambient Max.26.5
0.1 100 S3WBx Tl=150°C [TYP] Tl=25°C [TYP] Pulse measurement per diode Forward Voltage V F [V] Forward Current I F [A]
S3WBx Forward Power Dissipation Tj= 150°C Sine wave SIN Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
0.4 0.8 1.2 1.6 2.4 0 20 40 60 80 100 120 140 160 S3WBx Derating Curve Sine wave R-load Free in air Glass-epoxy substrate Solering land 5mm φ Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A] PCB l
Peak Surge Forward Capability 120 160 1 10 100 S3WBx 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied