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S3PHB110, Three Phase Half Controlled Bridge Modules/Full Controlled Bridge Type VRRM VRSM Dimensions in mm (1mm=0.0394") S3PHBD110, S3PFB110 Symbol Test Conditions Maximum Ratings Unit Tc=85oC, module module per leg 110 110 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1150 1230 1000 1070 A I FSM,ITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 6280 5000 4750 A 2sI (di/dt) cr 150 500 A/us (dv/dt) cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us tp = 10ms W Idav Idavm oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min I ISOL<1mA t=1s 2500 3000 V~ Md Mounting torque (M6) (10-32 UNF) Nm/lb.in. Weight 305 g TVJ=125oC repetitive, IT=50A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=1/2 diG/dt=0.3A/us IFRMS,ITRMS t . Idav 5 ± 15 % 44 ± 15 % typical S3PHB110G08B S3PHB110G12B S3PHB110G16B S3PHB110G18B V 800 1200 1600 1800 V 900 1300 1700 1900 S3PHBD110G08B S3PHBD110G12B S3PHBD110G16B S3PHBD110G18B S3PFB110G08B S3PFB 110 G12B S3PFB110G16B S3PFB110G18B S3PHBD110 3 1 24 6 5 3 1 2 3 1 2 S3PFB110S3PHB110 - + - + - + C D E ~ ~ ~ C D E ~ ~ ~ C D E ~ ~ ~ Symbol Test Conditions Maximum Ratings Unit Tc=85oC, module module per leg 110 110 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1150 1230 1000 1070 A I FSM,ITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 6280 5000 4750 A 2sI (di/dt) cr 150 500 A/us (dv/dt) cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us tp = 10ms W Idav Idavm oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 2500 3000 V~ Md Mounting torque (M6) (10-32 UNF) Nm/lb.in. Weight 305 g TVJ=125oC repetitive, IT=50A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=1/2 diG/dt=0.3A/us IFRMS,ITRMS t . Idav 5 ± 15 % 44 ± 15 % typical ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Symbol Test Conditions Characteristic Values Unit VVTM/ VFM ITM, IFM=110A;TVJ=25o C for every chip 1.64 VTO For power-loss calculations only 0.85 V rT 11 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 100 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 5 mA IH TVJ=25oC; VD=6V; RGK= 200 mA TVJ=25oC; tp=10us IG=0.45A; diG/dt=0.45A/us 450 mAIL per thyristor/diode; DC current per moduleRthJC 0.65

0.108 K/W

per thyristor/diode; DC current per moduleRthJH 0.8

0.133 K/W

dS Creeping distance on surface 10 mm dA Strike distance through air 9.4 mm a Maximum allowable acceleration 50 m/s2 ID,IR TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/ustgd 2 us TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=15V/us; VD=2/3VDRMtq 250 us IRM 45 A

FEATURES

  • Low forward voltage drop * Package with copper base plate * Glass passivated chips * Isolation voltage 3000 V~ ADVANTAGES * Space and weight savings * Easy to mount with two screws * Improved temperature and power cycling capability * Small and light weight

APPLICATIONS

  • Input rectifiers for PWM inverter * Supplies fir DC power equipment * Field supply for DC motors * Battery DC power supplies S3PHB110, Three Phase Half Controlled Bridge Modules/Full Controlled Bridge S3PHBD110, S3PFB110 * UL File NO.E310749 * RoHS compliant ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

S3PHB110, Three Phase Half Controlled Bridge Modules/Full Controlled Bridge S3PHBD110, S3PFB110 10-3 10-2 10-1 100 101 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10-3 10-2 10-1 100 101 100 200 300 400 500 600 700 800 900 A s IFSM t s t K/W ZthJC 50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C Fig. 1 Gate trigger characteristics Fig. 2 DC output current at case temperature Fig. 3 Surge overload current IFSM: Crest value, t: duration Fig. 4 Transient thermal impedance junction to case (per leg) 1 10 100 1000 0.1 IG VG mA 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 WIGD, TVJ = 125°C 0 50 100 15 100 120 A IdAV TC ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com