S3PDB200 SIRECTIFIER | Alldatasheet

Document overview

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Technical content

Three Phase Rectifier Modules Type S3PDB200N08 S3PDB200N12 S3PDB200N14 S3PDB200N16 S3PDB200N18 VRRM V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit Idav Idav TC=100oC, module TA=35oC (RthCA=0.2K/W), module 200 132 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 2240 2640 2000 2200 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 31360 36000 24960 25040 A2sI2t TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 2500 3000 V~ Md Mounting torque (M6) Terminal connection torque (M6) 5 + 15% 5 + 15% Nm_ Weight typ. 270 g _ + ~~~ M6x 10 6.5 6.5C~ D~ E ~ A+ B- 26 26

Three Phase Rectifier Modules

FEATURES

  • Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop ADVANTAGES * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling

APPLICATIONS

  • Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Symbol Test Conditions Characteristic Values Unit VR=VRRM; TVJ=25oC VR=VRRM; TVJ=TVJM < 0.3 < 5 mA VF IF=300A; TVJ=25oC < 1.43 V IR VTO For power-loss calculations only 0.8 V rT TVJ=TVJM 2.2 m per diode, 120o per moduleRthJC 0.45

0.075 K/W

per diode, 130o per moduleRthJK 0.6

0.1 K/W

dS Creeping distance on surface 10 mm dA Creepage distance in air 9.4 mm a Max. allowable acceleration 50 m/s2