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- Rating to 1800V PRV * Low forward voltage drop, high current capability * Reliable low cost construction utilizing molded plastic technique results in inexpensive product * Ideal for printed circuit board * Polarity:Symbols molded on body * Mounting position:Any * Weight:0.23 ounces,6.6 grams A B C D E F G H I J K L M N O P Q R S T U [mm] MIN TYP MAX Symbol Test Conditions Unit 18.0
3.70 AI(AV)
-55...+150 -55...+150 oC oC IFSM 300 Characteristic Values 1.15RthJC °C/W VF V IR Maximum Average Forward(With Heatsink) Rectified Current @TC=100 C(Without Heatsink) O O O O Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) IF=18.0A;TVJ=25 C Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C 1.20 100 A I t 2 I t Rating For Fusing(t 8.3ms) CJ Typical Junction Capacitance Per Element Per module Operating Temperature Range Storage Temperature Range A S pF Ø 34. 70 24. 70 17. 0 4. 70 12. 45 2. 30 3. 10 3. 40 4. 40 2. 50 0. 60 2. 0 0. 90 2. 50 7. 30 5. 40 3. 10 1. 40 4. 60 1. 20 35. 0 25. 0 17. 50 4. 80 12. 65 2. 50 3. 25 3. 60 4. 60 2. 70 0. 70 2. 20 1. 0 2. 60 7. 50 5. 50 ( 3. 0)×45° Ø3. 25 1. 50 4. 80 1. 30 35. 30 25. 30 18. 0 4. 90 12. 85 2. 70 3. 40 3. 80 4. 80 2. 90 0. 80 2. 40 1. 10 2. 90 7. 70 5. 60 Ø 3.40 1. 60 5. 0 1. 40 S3PDB18N02P 300 200 S3PDB18N04P 500 400 S3PDB18N06P 700 600 S3PDB18N08P 900 800 S3PDB18N12P 1300 1200 S3PDB18N14P 1500 1400 S3PDB18N16P 1700 1600 VRRM V VRMS V Dimensions(mm) Three Phase Bridge Rectifiers S3PDB18 * UL File E310749 * RoHS Compliant S3PDB18N18P 1900 1800 Sirectifier ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
Three Phase Bridge Rectifiers 0 30 60 90 120 150 180 VF A IF V TV J=125 C Pt ot Id( A V ) M A TA 0 5 10 15 20 25 30 35 40 100 110 120 0. 001 0. 01 0. 1 1 10 t s K/W Zt hJC C 0 40 80 120 160 TH Id( AV) M A C o t IFS M 0. 001 0. 01 0. 1 1 100 120 140 160 TV J= 25 C TV J= 125 f = 50 Hz VR = 0. 8VR R M A s I2t A2s ms t1 10 100 1000 VR = 0 V TV J= 25 C W RthHA [K/W] 0.4 s u s r e v t n e r r u c d r a w r o F 1 . g i F voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 P ower dissipation versus direct output current 0 8 1 e n i s , e r u t a re p m e t t n e i b m a d n a Fig. 5 Max. f orward current vs. case temperature Fig. 6 Transient the r mal impedance junction to case Constants f or ZthJC calculation: i R thi (K/W) t i (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.82 S3PDB18 o o o o C o TV J= 45 C o TV J= 125 Co ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com