S3L20U SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS (Unit : mm) RATINGS SHINDENGEN Low noise trr35ns Applicable to Automatic Insertion Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation APPLICATION
FEATURES
Case : AX14 Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 200 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load, Tl=128 3 A 50Hz sine wave, R-load, Ta=25 2.1 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=2560 A Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=2.1A, Pulse measurement Max.0.98V Reverse Current IR VR=VRM , Pulse measurement Max.10 ÊA Reverse Recovery Time trrIF=0.5A,@ IR=1A Max.35 ns Thermal Resistance Æjljunction to lead Max.6.5/W Æjajunction to ambient Max.60 Super Fast Recovery Rectifiers Single
0.1 100 S3L20U Tl=150°C [MAX] Tl=25°C [MAX] Pulse measurement per diode Tl=150°C [TYP] Tl=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
T D=tp/T 0 1 2 3 4 5 S3L20U 0.3 Forward Power Dissipation Tj = Tjmax SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0.5 1.5 2.5 3.5 0 20 40 60 80 100 120 140 160 S3L20U 0.3 Derating Curve VR = VRM SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A]
T D=tp/T 0 20 40 60 80 100 120 140 160 S3L20U 0.3 Derating Curve VR = VRM SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Lead Temperature Tl [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 1 10 100 S3L20U 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied
0.05 0.50.2 20 5052 200 500 2000 5000 Junction Capacitance Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tl=25°C TYP per diode