S3K60 SHINDENGEN | Alldatasheet
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Axial Diode Super Fast Recovery Diode MSW OUTLINE Weight 106¢(Typ) 600V 3A 1 25 | L 265 Lal 265 JL lous ¢ SimMHEFRD ‘@ High Voltage Supper FRD _ _ © trr=100ns # trr=100ns ! ‘ ° eK VF=1.3V © Low Vr=1.3V + ernie Mere © 2R4YFYIBE — © Switching Regulator °RB.OA ‘© Home Appliance, Office Automation enn _/ \\ ao kat 6) ao * Communication se _/ \\ 22h e754 ID © Fly Wheel SHEN Ov TAMMIE Webtt4 b LIL H 1 A— FAY 7 RR) EBNF S01, HARPER OU CU RHRPIMENE CO FS For details of the outine dimensions, refer to our web site or the diode isha! data book. As forthe marin, reer othe Speciation “Marking, ‘ferminal Gonnection* MwX RATINGS @fEXtRATH Absolute Maximum Ratings (Hoe T1=25C) HH Ee lar ih % WE Item Symbol] Conditions Type No. Unit Tetra =55~ S tape temperate a eer TIL : Spetaniunronrenpeene | Hf LC isomumPowse onage | Mw | w=nse Too rove | arenes, xen [owe |, Average Rectified Forward Current lo 50Hz sine wave, Resistance load ART — VR Irs 50Hz Ski, JEM Y IR LIAR FLEA RHA, Tj = 25°C 120 A Peak Surge Forward Current HSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25°C ‘ @BAN AAS Electrical Characteristics (HEO*VIG TI=25C) MULE = AV AM ‘a Mes Vtace y iti — TW Aili SD overy Tine trr | Ir=05A,In=1A MAX 100 ns jy | seer 9 - Fm sai, 83 Sanction to lead MAX 65 ww Thermal Resistance AEB APA ° | ia | ficient | wax | KRRABS NRAKRO LOC SMS LIERETSCE MEY EF. All specifications are subject to change without notice. 196 (533) wwwshindengen.co.jpiproduct/semil
M#${4E0 CHARACTERISTIC DIAGRAMS IBA ate NESE Re CARY SR Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability (aoe | lt SSS ee] Po ee de sewn az . = PAZ TT |e ps SC ay Sarr] |S 4 oS 0 J 5 l 2° SC ee @teiP Tyr yyy) ye so HH ed ss SL ATTTTT |g GEES J nm a = ~ SC Je A tee) LEAs ci | eae fe St LEA eo ee ca Seas rimmed | Wa 2 Ce oH AAS i WY, st ESA YY a
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eee mst] (eA oe ee a LL PAT | | fem Ae eee pro = Cr Te OD Forward Voltage Vr (V) ‘Average Rectified Forward Current To (A) Number of Cycles (cycle) FaL—F4YIN—T Ta-lo FaL—F4YIN—T Ti-lo goes || eee Derating Curve Ta-lo Derating Curve T/-lo STFA» | vunetion Capacitance poseerspey ists | a ne <) SEH |<) Camemeem meme | 1/0001) 0d cp Steerer iagMgMigga [> UPSESSEESSEN SEED Genie ceiii ce pete ed |e COTTA |e So S Ta fe pe Je HC J; SEES SHH RHE 0 gees eee sem me eg el Ns SE
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pit ESS fi tt os a = REGS RNC ted |B thee |e Sea PSSpese RISE ies ee 05) Sek 2 PSHE Here |e CN Hi ao S Ee a | se Gy Rend SEGSEESS GCSE OGGE SUES G¢=00009 0) (C-07\\ OO UE Tae | pe | a Ambient Temperature Ta (°C) Lead Temperature Tt (°C) Reverse Voltage Vr (V) | * Sine wave lt 50Hz THE LTH ET.
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EARLE OATES MAIL 759 7 Fo TRO ET. . . . Typical SHSt2KINERLTWET. KILRABS WRARO LIC ME LICREF SCE MEY ET. 4 Semiconductor products generally have characteristic variation, All specifications are subject to change without notice. ‘Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi! (833) 195