S3JHE3-57T VISHAY | Alldatasheet
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S3A, S3B, S3D, S3G, S3J, S3K, S3M www.vishay.com Vishay General Semiconductor Revision: 25-Apr-14 1 Document Number: 88713 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Low forward voltage drop
- Low leakage current
- High forward surge capability
- Meets MSL level 1, per J-ST D-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rect ification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co mpliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 cla ss 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IR 10 μA VF 1.15 V TJ max. 150 °C Package DO-214AB (SMC) Diode variations Single die DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT Device marking code SA SB SD SG SJ SK SM Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 103 °C I F(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 100 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
S3A, S3B, S3D, S3G, S3J, S3K, S3M www.vishay.com Vishay General Semiconductor Revision: 25-Apr-14 2 Document Number: 88713 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT Maximum instantaneous forward voltage 2.5 A VF 1.15 V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C IR 10 μATA = 125 °C 250 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 μs Typical junction capacitance 4.0 V, 1 MHz CJ 60 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT Typical thermal resistance (1) RJA 47 °C/WRJL 13 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S3J-E3/57T 0.211 57T 850 7" diam eter plastic tape and reel S3J-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel S3JHE3_A/H (1) 0.211 H 850 7" di ameter plastic tape and reel S3JHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel 150 50 70 90 110 130 170 0.5 1.0 1.5 2.0 2.5 3.5 3.0 Resistive or Inductive Load P.C.B. Mounted on Copper Pad Areas Average Forward Current (A) Lead Temperature (°C) 100 10 100 1000 Number of Cycles at 60 Hz Peak For ward S urge C urrent (A) TL = 75 °C 8.3 ms Single Half Sine-Wave
S3A, S3B, S3D, S3G, S3J, S3K, S3M www.vishay.com Vishay General Semiconductor Revision: 25-Apr-14 3 Document Number: 88713 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.6 0.7 100 0.01 0.1 1.0 Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0 20 40 60 80 100 0.1 100 TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (µA) 100 1 10 100 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 1 10 100 0.1 100 Mounted on 0.20" x 0.27" (5 mm x 7 mm) Copper Pad Areas t - Pulse Duration (s) Transient Thermal Impedance (°C/W) Cathode Band DO-214AB (SMC) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) Mounting Pad Layout 0.126 (3.20) MIN. 0.060 (1.52) MIN. 0.185 (4.69) MAX. 0.320 (8.13) REF.
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