S3AB SAMYANG | Alldatasheet

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MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25oC ambient temperature unless otherwise specified S3DB S3GB S3JB S3KB S3MB M axim um recurrent peak reverse voltage VRRM 200 400 600 800 1000 V M axim um R M S voltage VRWS 140 280 420 560 700 V M axim um D C Blocking Voltage VDC 200 400 600 800 1000 V M axim um average forword rectified current V @ TL=90OC IF(AV) A P eak forward surge current @ TL = 110°C 8.3m s V single half-sine-wave superim posed on rated V load(JE D E C M ethod) IFSM A M axim um Instantaneous forward voltage at 3.0 A VF V M axim um D C reverse current @TA=25oC at rated D C blockjing voltage @TA=100oC Typical junction capacitance CJ pF JA Operating junction and storage tem perature rangeTJTSTG oC Terminals:Solder plated, solderable per M IL-STD- 1111750, M ethod 2026 DO - 214AA(SMB) Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.093 gram 3.0 IR 100.0 oC/WTypical therm al resitance (NOTE 2) 100.0 1.15 10.0 NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 100 35 70 Plastic package has underwriters laboratory 111 flammability classification 94V -0 100 For surface mounted applications S3BB UNITS Glass passivated chip junction S3AB --- S3MB 111REVERSE VOLTA GE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AA ,molded plastic over 1111passivated chip High temperature soldering: 111 250oC/10 seconds at terminals Low profile package S3AB www.diode.co.kr inch(mm) 40R SAMYANG ELECTRONICS SAM YANG PLAST IC SILICON RECTIFIER All d ata sheet.com

0.4 0.01 0.1 100 TJ=25 C O Puise Width=300 S 1%DUTY CYCLE 0 20 40 60 80 100 100 0.01 0.001 0.1 TJ=125 C TJ=75 C TJ=25 C O O O 1 1 0 1 0 0 TL=110 C 8.3ms Single Hal f Sine Wave (JEDEC Method) O 100 2.0 1.0 Resistive or inductive Load 60Hz Resistive or Inductive load P.C.B.MOUNTED THICK COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 www.diode.co.kr AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES JUNCTION CAPACITANCE pF FIG.5-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,VOLTS LEAD TEMPERATURE NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS RATINGS AND CHARACTERISTIC CURVES S3AB---S3MB FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT PERCENT OF RATED PEAK REVERSE VOLTAGE, .4 1.0 2 100 4 10 20 40 100 f=1MHz TJ=25 All d ata sheet.com