S3A KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Diod es Rectifier Diodes S3A ~ S3M ■ Features

  • Low profile package
  • Ideal for automated placement
  • Glass passivated chip junction
  • Low forward voltage drop
  • Low leakage current
  • High forward surge capability 2.007 2.616 7.112 6.604 8.128 7.747 6.223 5.588 3.250 2.743 6.18 5.98 4.69 4.49 7.67 7.47 3.07 3.27 1.524 0.762 0.203 0.051 0.305 0.152 Recommended Land Pattern DO-214AB(SMC) Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol S3A S3B S3D S3G S3J S3K S3M Unit Peak Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 DC Blocking Voltage VR 50 100 200 400 600 800 1000 Average Rectified Current@ TL=103℃ IFAV Peak Forward Surge Current @=8.3ms IFSM Thermal Resistance Junction to Ambient RθJA Thermal Resistance Junction to Lead RθJC Junction Temperature TJ Storage Temperature range Tstg -55 to 150 ℃/W V 100 150 A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Forward voltage VF IF= 2.5 A 1.15 V Ta = 25℃ 10 Ta = 125℃ 250 Junction capacitance Cj VR= 4 V, f= 1 MHz 60 pF Typical reverse recovery time trr IF= 0.5V, IR= 1A,Irr=0.25A 2.5 us IR uA Reverse voltage leakage current ■ Marking NO. S3A S3B S3D S3G S3J S3K S3M Marking S3A S3B S3D S3G S3J S3K S3M

www.kexin.com.cn2 Diod es Rectifier Diodes S3A ~ S3M ■ Typical Characterisitics - 2 .giF evruC gnitareD tnerruC drawroF - 1 .giF Maximum Non-Repetitive Pe ak Forward Surge Current 150 50 70 90 110 130 170 0.5 1.0 1.5 2.0 2.5 3.5 3.0 Resistive or Inductive Load P.C.B. Mounted on Copper Pad Areas Average Forward Current (A) Lead Temperature (°C) 100 10 100 1000 Number of Cycles at 60 Hz roF kaeP ward Su C egr u )A( tnerr TL = 75 °C 8.3 ms Single Half Sine-Wave Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 0.6 0.7 100 0.01 0.1 1.0 Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0 20 40 60 80 100 0.1 100 TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) oenatnatsnI u eR s verse Cu )Aµ( tnerr 100 1 10 100 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 0.01 0.1 1 10 100 0.1 100 Mounted on 0.20" x 0.27" (5 mm x 7 mm) Copper Pad Areas t - Pulse Duration (s) W/C°( ecnadep mI la mrehT tneisnarT