S3ABF SEMIPOWER | Alldatasheet
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Technical content
DESCRIPTION
Marking Code： S3AB-S3MB Simplified outline SMBF and symbol 1 2
FEATURES
For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMBF Terminals: Solderable per MIL-STD-750, Method 2026 pprox. Weight: 57mg / 0.002oz
- A Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A S3ABF THRU S3MBF Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Instantaneous Forward Voltage at 3 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 115 °Cc Maximum DC Reverse Current = 25 °C at Rated DC Blocking Voltage =125 °C Ta Ta Typical Junction Capacitance VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 100 1.1 150 -55 ~ +150 A A V μA pF Maximum Ratings and Electrical characteristics Typical Thermal Resistance °C/W Cj T , Tj stg Symbols Units Page 1 of 3 （1） （2） S3ABF S3BBF S3DBF S3GBF S3JBF S3KBF S3MBF Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） RθJA RθJC Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current（ A）Reverse μ T =125J °C T =25J °C Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) Page 2 of 3 T =25J °C 100 120 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 0.0 Fig.4 Typical Junction Capacitance 0.1 0.6 1.0 1.2 1.6 Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.4 Fig.3 Typical Forward Characteristic 1.0 1.40.8 1.8 T =25J °C Single phase half-wave 60 Hz resistive or inductive load S3ABF THRU S3MBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
The recommended mounting pad size Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71) PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 S3ABF THRU S3MBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0