S3ABF SKTECHNOLGY | Alldatasheet

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Technical content

DESCRIPTION

Marking Code: S3AB-S3MB Simplified outline SMBF and symbol S3ABF S3BBF S3DBF S3GBF S3JBF S3KBF S3MBF 1 2

FEATURES

For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMBF Terminals: Solderable per MIL-STD-750, Method 2026 pprox. Weight: 57mg / 0.002oz

  • A Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous Forward Voltage at 3 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at Ta = 65 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C 1)Typical Junction Capacitance VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 100 1.1 200 -55 ~ +150 A A V μA pF Maximum Ratings and Electrical characteristics Typical Thermal Resistance RθJA Measured at 1 MHz and applied reverse voltage of 4 V D.C °C/W Cj T , Tj stg Symbols Units S3ABF THRU S3MBF 1 of 3 REV.08

Fig.3 Typical Instaneous Forward Characteristics Instaneous Forward Current (A) 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300μs 1% duty cycle Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current( A)Reverse μ T =125J °C T =25J °C Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C 100 120 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature (°C) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 0.0 Single phase half wave resistive or inductive P.C.B mounted on Fig.4 Typical Junction Capacitance 2 of 3 REV.08 S3ABF THRU S3MBF

The recommended mounting pad size Unit:mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71) PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 3 of 3 REV.08 S3ABF THRU S3MBF