S3AB DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified S3DB S3GB S3JB S3KB S3MB Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v olt age V RWS 140 280 420 560 700 V Max imum DC Bloc king V olt age V DC 200 400 600 800 1000 V Maximum average forword rectified current V @ T L =90 O C I F(AV) A Peak forw ard surge current @ T L = 110°C 8.3ms V single half-sine-w ave superimposed on rated V load(JEDEC Method) I FSM A Maximum Instantaneous forward voltage at 3.0 A V F V Max imum DC r ev er s e c ur r ent @T A =25 o C at rated DC blockjing voltage @T A =100 o C Typical junction capacitance C J pF JA Operating junction and storage temperature range T J T STG o C Terminals:Solder plated, solderable per MIL-STD- 1111750, Method 2026 SURFACE MOUNT RECTIFIERS DO - 214AA(SMB) Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.093 gram 3.0 I R 100 o C/W Typical thermal resitance (NOTE 2) 100 1.15 NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 100 35 70 Plastic package has underwriters laboratory 111 flammability classification 94V-0 100 For surface mounted applications S3BB UNITS Glass passivated chip junction S3AB - - - S3MB 111REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AA,molded plastic over 1111passivated chip High temperature soldering: 111 250 o C/10 seconds at terminals Low profile package S3AB Dimensions in millimeters 40R Diode Semiconductor Korea www.diode.kr
0.4 0.01 0.1 100 T J =25 C O Puise Width=300 S 1%DUTY CYCLE 0 20 40 60 80 100 100 0.01 0.001 0.1 T J =125 C T J =75 C T J =25 C O O O 1 1 0 1 0 0 T L =110 C 8.3ms Single Half Sine Wave (JEDEC Method) O 100 2.0 1.0 Resistive or inductive Load 60Hz Resistive or Inductive load P.C.B.MOUNTED THICK COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES JUNCTION CAPACITANCE pF FIG.5-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,VOLTS LEAD TEMPERATURE NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS S3AB - - - S3MB FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT PERCENT OF RATED PEAK REVERSE VOLTAGE, .4 1.0 2 100 4 10 20 40 100 f=1MHz T J =25 www.diode.kr Diode Semiconductor Korea