S3D60065H2 SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 S3D60065H2 650V SIC POWER SCHOTTKY RECTIFIER

Description

Applications

TO-247AC(TO-247-2)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 650V 60A diode is high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D60065H2 is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  “-A” is an AEC-Q101 qualified device  Terminals finish: 100% Pure Tin  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 * Pulsewidth<300µs, dutycycle<2% Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VDC 650 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 128 A IF(AV)2 Tc=125°C 70 A IF(AV)3 Tc=138°C 60 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,TC =25°C 240 A IFRM2 10ms,HalfSinepulse,TC =110°C 160 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM1 10ms,HalfSinepulse,TC =25°C 500 A IFSM2 10ms,HalfSinepulse,TC =110°C 340 A PowerDissipation Ptot1 TC=25℃ 484 W Ptot2 TC=110℃ 209 W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @60A,Pulse,TJ =25C 1.4 1.7 V VF2 @60A,Pulse,TJ =175C 1.6 2.0 V ReverseCurrent* IR1 @VR =ratedVR，TJ =25C 8 50 uA IR2 @VR =ratedVR， TJ =175C 80 200 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 4600 - pF ReverseRecoveryCharge Qc IF =60A,di/dt=200A/μs VR=400V,TJ =25°C 286.9 - nC CapacitanceStoredEnergy EC VR =400V,TJ =25°C 70.3 - μJ Thermal-Mechanical Specifications: Characteristics Symbol S3D60065H2 Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C TypicalThermalResistanceJunctiontoCase RJC 0.31 C/W

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2

Ordering Information

Device Package Plating Shipping S3D60065H2 TO-247AC(TO-247-2) PureSn 25pcs/tube Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage Fig.5-Capacitance Stored Energy Fig.6-Power Derating

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 Marking Diagram WhereXXXXX isYYWWL S3D =DeviceType H = Packagetype 60 =ForwardCurrent (60A) 065 =Reverse Voltage (650V) SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0 Fig.7-Current Derating

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 Tube Specification Mechanical Dimensions TO-247AC(TO-247-2) SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.00 5.20 A1 2.20 2.41 2.61 A2 1.90 2.00 2.10 b 1.10 1.20 1.35 b1 1.80 2.00 2.20 c 0.50 0.60 0.75 D 20.30 21.00 21.20 D1 16.58 D2 1.17 E 15.60 15.80 16.00 E1 14.02 E2 5.00 E3 2.50 e 5.44 L 19.42 19.92 20.42 L1 4.13 P 3.50 3.60 3.70 P1 7.1 7.19 7.40 P2 2.50 Q 5.80 S 6.05 6.15 6.25 T 10.00 U 6.20 TO-247AC(TO-247-2)

Data Sheet N2616, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D60065H2 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.