S3D50065D1

S3D50065D1 SMCDIODE | Alldatasheet

Document overview

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Technical content

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H S3D50065D1 S3D50065G S3D50065H 650V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

S3D50065D1 S3D50065G S3D50065H TO-247AD TO-247-3 D2PAK (TO-263-2) TO-247AC TO-247-2 Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VDC 650 V AverageRectifiedForwardCurrent IF(AV)1 TC =25°C 112 A IF(AV)2 TC =137°C 50 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,TC=25°C 121 A IFRM2 10ms,HalfSinepulse,TC=110°C 68 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM1 10ms,HalfSinepulse,TC=25°C 300 A IFSM2 10ms,HalfSinepulse,TC=110°C 209 A  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 650V 50A diode is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D50065D1/S3D50065G/S3D50065H are ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition S3D50065G S3D50065D1 S3D50065H Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistance JunctiontoCase RJC DCoperation 0.75 0.70(perleg) 0.35(bothleg) 0.76 C/W Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @50A,Pulse,TJ =25C 1.5 1.7 V VF2 @50A,Pulse,TJ =175C 2.2 2.4 V ReverseCurrentatDCcondition* IR1 @VR =ratedVR TJ =25C 1 40 uA ReverseCurrent* IR2 @VR =ratedVR TJ =175C 10 60 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=100MHz 3120 - pF ReverseRecoveryCharge Qc IF =50A,di/dt=200A/μs VR =400V,TJ =25°C 193.4 - nC CapacitanceStoredEnergy EC VR =400V,TJ =25°C 47.37 - μJ Thermal-Mechanical Specifications:

Ordering Information

S3D50065D1 TO-247AD(TO-247-3) 25pcs/tube S3D50065G D2PAK(TO-263-2) 800pcs/reel S3D50065H TO-247AC(TO-247-2) 25pcs/tube

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Current Derating

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H Fig.5-Power Derating Fig.6-Total Capacitance Charge vs. Reverse Voltage Fig.7-Capacitance Stored Energy

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H Marking Diagram Tube Specification (TO-247-3/TO-247-2) Carrier Tape & Reel Specification SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL S3D =Device Type D1/G/H =Packagetype 50 = ForwardCurrent (50A) 065 =Reverse Voltage(650V) SSG =SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resin UL:94V-0

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H Mechanical Dimensions TO-247AD SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.20 A1 2.00 2.75 A2 1.90 2.10 b 1.00 1.40 b1 1.80 2.40 b2 2.80 3.40 c 0.40 0.75 D 19.80 21.20 D1 16.55 D2 1.20 E 15.20 16.00 E1 13.30 E2 5.00 E3 2.50 e 5.20 5.70 L 13.90 20.70 L1 3.70 4.30 P 3.50 3.70 P1 7.1 7.40 P2 2.50 Q 5.80 S 6.05 6.25 T 10.00 U 6.20 Mechanical Dimensions D2PAK(TO-263-2) Symbol Dimensionsinmillimeters Min. Max. A 4.06 4.83 A1 0 0.26 b 0.51 0.99 b1 1.14 1.78 c 0.31 0.74 c1 1.14 1.65 D 8.38 9.65 D1 6.4 E1 6.22 E2 9.65 10.67 e 2.54BSC H 14.6 15.88 L 1.78 2.8 L1 - 1.68 L2 - 2.2 L3 0.255BSC Θ 0 8°

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H Mechanical Dimensions TO-247AC SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.00 5.20 A1 2.20 2.41 2.61 A2 1.90 2.00 2.10 b 1.10 1.20 1.35 b1 1.80 2.00 2.20 c 0.50 0.60 0.75 D 20.30 21.00 21.20 D1 16.58 D2 1.17 E 15.60 15.80 16.00 E1 14.02 E2 5.00 E3 2.50 e 5.44 L 19.42 19.92 20.42 L1 4.13 P 3.50 3.60 3.70 P1 7.1 7.19 7.40 P2 2.50 Q 5.80 S 6.05 6.15 6.25 T 10.00 U 6.20

Data Sheet N2450, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D50065D1 S3D50065G S3D50065H DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.