S3D10065L SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L S3D10065L 650V SIC POWER SCHOTTKY RECTIFIER

Description

Applications

Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VDC 650 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 31 A IF(AV)2 Tc=135°C 14 A IF(AV)3 Tc=150°C 10 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,TJ =25°C 55 A IFRM2 10ms,HalfSinepulse,TJ =110°C 40 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM1 10ms,HalfSinepulse,TJ =25°C 115 A IFSM2 10ms,HalfSinepulse,TJ =110°C 80 A Non-RepetitivePeakForwardSurgeCurrent IF,Max 10μs.Pulse,TJ=25℃ 995 A IF,Max 10μs.Pulse,TJ=110℃ 685 A Power Dissipation Ptot1 TJ =25℃ 103 W Ptot1 TJ =110℃ 45 W DFN8*8  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection S3D10065L is a SiC Schottky rectifier packaged in DFN8*8 case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D10065L is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L * Pulsewidth<300µs, dutycycle<2% Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @10A,Pulse,TJ =25C 1.45 1.7 V VF2 @10A,Pulse,TJ =175C 1.65 2.0 V ReverseCurrent* IR1 @VR =ratedVR TJ =25C 0.7 40 uA IR2 @VR =ratedVR TJ =175C 7 160 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 787 - pF ReverseRecoveryCharge Qc IF =10A,di/dt=200A/μs VR=400V,TJ =25°C 49.1 - nC CapacitanceStoredEnergy EC VR =400V,TJ =25°C 12.03 - μJ Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctiontoCase RJC DCoperation 2.5 C/W Marking Diagram

Ordering Information

S3D10065L DFN8*8 3000Pcs/Reel S3D10065LTR DFN8*8 3000Pcs/Reel WhereXXXXX isYYWWL S3D =Device Type L =Packagetype 10 =ForwardCurrent (10A) 065 =ReverseVoltage (650V) SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin EpoxyresinUL:94V-0

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L Fig.5-Capacitance Stored Energy Fig.7-Power Derating Fig.8-Current Derating Fig.6-Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform)

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L Mechanical Dimensions DFN8*8 SYMBOL Millimeters Min. Max. A 0.800 0.900 A1 - 0.050 A3 0.195 0.211 D 7.900 8.100 E 7.900 8.100 e 2.00BSC b 0.950 1.050 D2 7.100 7.300 E2 4.250 4.450 L 0.400 0.600 K 2.650 2.850

Data Sheet N2437, REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D10065L DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.