S3D08065A SMCDIODE | Alldatasheet

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Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I 650V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I TO-220AC (TO-220-2) DPAK (TO-252-2) D2PAK (TO-263-2) ITO-220AC (TO-220-F2) TO-220-Isolation  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 650V 8A diode is high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D08065A/S3D08065E/S3D08065G/S3D08065F are ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I * Pulsewidth<300µs, dutycycle<2% Maximum Ratings Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VDC 650 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 27 A IF(AV)2 Tc=153°C 8 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,Tc=25°C 37.5 A IFRM2 10ms,HalfSinepulse,Tc=110°C 25.5 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM1 10ms,HalfSinepulse,Tc=25°C 90 A IFSM2 10ms,HalfSinepulse,Tc=110°C 60 A Non-RepetitivePeakForwardSurgeCurrent IF,Max 10μs.Pulse,Tc=25℃ 650 A IF,Max 10μs.Pulse,Tc=110℃ 530 A Power Dissipation Ptot1 Tc=25℃ 103 W Ptot1 Tc=110℃ 44.5 W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @8A,Pulse,TJ =25C 1.45 1.7 V VF2 @8A,Pulse,TJ =175C 2.1 2.4 V ReverseCurrent* IR1 @VR =ratedVR,TJ =25C 0.3 10 uA IR2 @VR =ratedVR,TJ =175C 3 100 uA JunctionCapacitance CT VR=0V,Tj=25℃,f=1MHz 650 - pF ReverseRecoveryCharge Qc IF =8A,di/dt=200A/μs VR =400V,TJ =25°C 40.55 - nC CapacitanceStoredEnergy EC VR =400V,TJ =25°C 9.93 - μJ

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. Thermal-Mechanical Specifications: Characteristics Symbol S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C TypicalThermal ResistanceJunctionto Case

Ordering Information

S3D08065A TO-220AC(TO-220-2) 50pcs/tube S3D08065E DPAK(TO-252-2) 2500pcs/reel S3D08065ETR DPAK(TO-252-2) 2500pcs/reel S3D08065G D2PAK(TO-263-2) 800pcs/reel S3D08065GTR D2PAK(TO-263-2) 800pcs/reel S3D08065F ITO-220AC(TO-220-F2) 50pcs/tube S3D08065I TO-220-Isolation 50pcs/tube

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Fig.5-Capacitance Stored Energy Fig.6-Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Fig.7-Power Derating Fig.8-Current Derating

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Marking Diagram Tube Specification(TO-220-2/TO-220-F2/TO-220-Isolation) Carrier Tape & Reel Specification DPAK(TO-252-2) SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30 WhereXXXXX isYYWWL S3D =Device Type A/E/G/F/I =Packagetype 08 =ForwardCurrent (8A) 65 =Reverse Voltage(650V) SSG =SSG YY =Year WW =Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Carrier Tape & Reel Specification D2PAK(TO-263-2) SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AC(TO-220-2) Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E - - 1.78 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 -

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Mechanical Dimensions DPAK(TO-252-2) SYMBOL Dimensions in millimeters Min. Typ. Max. A 2.18 - 2.39 A1 - - 0.13 b 0.64 - 0.89 c 0.46 - 0.89 D 6.35 - 6.73 D1 4.95 - 5.46 D2 4.32 - - E 5.97 6.1 6.22 e 2.29BSC L 9.4 - 10.41 L1 2.90REF. L2 1.4 1.52 1.78 L3 1.60REF. L4 - - 1.02 Φ 1.1 - 1.3 Θ 0° - 10° V 5.21 - - Mechanical Dimensions D2PAK(TO-263-2) Symbol Dimensionsinmillimeters Min. Max. A 4.06 4.83 A1 0 0.26 b 0.51 0.99 b1 1.14 1.78 c 0.31 0.74 c1 1.14 1.65 D 8.38 9.65 D1 6.40 E1 6.22 E2 9.65 10.67 e 2.54BSC H 14.6 15.88 L 1.78 2.8 L1 - 1.68 L2 - 2.2 L3 0.255BSC Θ 0 8°

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I Mechanical Dimensions ITO-220AC(TO-220-2F) Symbol Dimensions in millimeters Min. Typical Max. A 4.30 4.0 4.70 A1 1.30 A2 2.80 3.00 3.20 A3 2.50 2.70 2.90 b 0.5 0.6 0.75 b1 1.20 b2 1.60 e 0.55 0.6 0.75 D 14.80 15.00 15.20 E 8.96 10.14 10.36 e 2.55 e1 5.10 H1 8.50 8.70 8.90 L 17.70 18.20 18.70 L1 1.80 L2 1.00 L3 0.80 L4 1.10 ΦP1(上口) 3.30 3.50 3.70 ΦP1(下口) 2.99 3.19 3.39 Q 2.50 2.70 2.90 Θ1 5° Θ2 4° Θ3 10° Θ4 5° Θ5 5° Mechanical Dimensions TO-220-Isolation SYMBOL Millimeters Inches Min. Max. Min. Max. A 9.7 10.4 0.381 0.409 B 2.5 3.0 0.098 0.118 C 3.5 3.9 0.137 0.153 D 0.7 0.92 0.027 0.036 E 3.72 3.95 0.146 0.155 F 14.51 15.55 0.571 0.612 G 12.95 13.9 0.509 0.547 H 4.95 5.19 0.194 0.204 I 4.38 4.65 0.172 0.183 J 1.15 1.36 0.045 0.053 K 5.86 6.38 0.230 0.251 L 2.35 2.85 0.092 0.112 M 0.32 0.58 0.012 0.022 N 1.18 1.42 0.046 0.055

Data Sheet N2425, REV. D  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S3D08065A S3D08065E S3D08065G S3D08065F S3D08065I DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovided toanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.