S3D06065L SMCDIODE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L S3D06065L 650V SIC POWER SCHOTTKY RECTIFIER

Description

Applications

Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VDC 650 V Average Rectified Forward Current IF (AV)1 Tc=25°C 24 A IF (AV)2 Tc=136°C 9 A IF (AV)3 Tc=157°C 6 A Repetitive Peak Forward Surge Current IFRM1 10ms, Half Sine pulse, TC =25°C 30 A IFRM2 10ms, Half Sine pulse, TC =110°C 20 A Peak One Cycle Non-Repetitive Surge Current IFSM1 10ms, Half Sine pulse, TC =25°C 70 A IFSM2 10ms, Half Sine pulse, TC =110°C 48 A Non-Repetitive Peak Forward Surge Current IF,Max1 10μs. Pulse, TC =25℃ 600 A IF,Max2 10μs. Pulse, TC =110℃ 500 A Power Dissipation Ptot1 TC =25℃ 103 W Ptot2 TC =110℃ 45 W DFN8×8  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection S3D06065L is a SiC Schottky rectifier packaged in DFN8×8 case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D06065L is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L * Pulse width < 300 µs, duty cycle < 2% For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 6A, Pulse, TJ = 25 C 1.5 1.7 V VF2 @ 6A, Pulse, TJ = 175 C 1.9 2.4 V Reverse Current* IR1 @VR = rated VR TJ = 25 C 0.03 3 uA IR2 @VR = rated VR TJ = 175 C 0.6 25 uA Junction Capacitance CT VR=0V, TJ=25℃, f=1MHz 382 - pF Reverse Recovery Charge Qc IF = 6A, di/dt = 200A/μs VR = 400 V, TJ =25°C 23.8 - nC Capacitance Stored Energy EC VR = 400 V, TJ =25°C 5.88 - μJ Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +175 C Storage Temperature Tstg - -55 to +175 C Typical Thermal Resistance Junction to Case RJC DC operation 2.5 C/W Marking Diagram

Ordering Information

S3D06065L DFN 8×8 3000/Reel S3D06065LTR DFN 8×8 3000/Reel Where XXXXX is YYWWL S3D = Device Type L = Package type 06 = Forward Current (6A) 065 = Reverse Voltage (650V) SSG = SSG YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Total Capacitance Charge vs. Reverse Voltage 0.1 1 10 100 100 150 200 250 300 350 Cj(pF) VR(V) 0 50 100 150 200 250 300 350 400 450 500 550 600 650 QC(nC) VR(V)

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L Fig.5-Capacitance Stored Energy Fig.6-Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Fig.7-Power Derating Fig.8-Current Derating 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0.0 2.5 5.0 7.5 10.0 12.5 15.0 EC(uJ) VR(V)

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L Carrier Tape & Reel Specification DFN8×8 SYMBOL Millimeters Min. Max. A0 8.30 8.50 B0 8.40 8.60 K0 1.20 1.40 P0 3.90 4.10 P1 11.90 12.10 P2 1.95 2.05 T 0.20 0.30 E 1.65 1.85 F 7.40 7.60 D0 1.50 1.60 D1 1.50 W 15.70 16.30 Mechanical Dimensions DFN8×8 SYMBOL Millimeters Min. Max. A 0.800 0.900 A1 - 0.050 A3 0.195 0.211 D 7.900 8.100 E 7.900 8.100 e 2.00 BSC b 0.950 1.050 D2 7.100 7.300 E2 4.250 4.450 L 0.400 0.600 K 2.650 2.850

Data Sheet N2373, REV.C  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  S3D06065L DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.