S3ABF THINKISEMI | Alldatasheet
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/cuspopen For surface mounted application /cuspopen Glass passivated junction chip. /cuspopen Low forward voltage drop /cuspopen High current capability /cuspopen Easy pick and place /cuspopen High surge current capability /cuspopen Plastic material used carries Underwriters Laboratory Classification 94V-0 /cuspopen High temperature soldering: /cuspopen 260 o C / 10 seconds at terminals Mechanical Data /cuspopen Case: Molded plastic /cuspopen Terminals: Pure tin plated, lead free. /cuspopen Polarity: Indicated by cathode band /cuspopen Packaging: 16mm tape per EIA STD RS-481 /cuspopen Weight: 0.062 gram approximately Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol Units Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Avera ge Forward Rectified Current L =75 o C I (AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) I FSM 100 A Maximum Instantaneous Forward Voltage @ 3.0A V F Maximum DC Reverse Current @ T A =25 o C at Rated DC Blocking Voltage @ T A =125 o C I R 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 2.5 uS Typical Junction Capacitance ( Note 2 ) Cj 40 pF Typical Thermal Resistance (Note 3) R θJL o C/W Operating Temperature Range T J -55 to +150 o C Storage Temperature Range T STG -55 to +150 o C Notes: 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts SMBF Unit: inch (mm) S3ABF thru S3MBF Pb Free Plating Product S3ABF thru S3MBF
3.0 Amperes Surface Mount Miniature Glass Passivated Standard Rectifier
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.08T Cathode Band Top View 0.165(4.2) 0.173(4.4) 0.216(5.5) 0.200(5.1) 0.146(3.70) 0.138(3.50) 0.075(1.90) 0.086(2.20) 0.051(1.30) 0.043(1.10) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.039(1.0) S3ABF S3BBF S3DBF S3GBF S3JBF S3KBF S3MBF 1.10 V
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT ROF KAEP TNERRUC EGRUS DRA W )A(. 1 05015 100 100 200 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method Tj=Tj max FIG.4- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACITANCE.(pF) 100501051 100 REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.5- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT . (A) 0.01 0.03 0.1 0.3 100 FORWARD VOLTAGE. (V) PULSE WIDTH-300 S 2% DUTY CYCLE Tj=25 C FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 0.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C Tj=25 C INSTANTANEOUS REVERSE CURRENT .( A ) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 50 60 70 80 100 110 120 130 14090 150 0.5 2.0 3.5 3.0 2.5 1.0 1.5 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD P. C. BOARD MOUNTED ON 10mm PAD AREAS 0 165 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm S3ABF thru S3MBF © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T