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SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERS Forward Current-3.0A Reverse Voltage-50V to 1000V  Case: SMAF molded plastic body  Terminals: Solderable per MIL-STD- 750, Method 2026  Weight: Approximated 0.027 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. PARAMETER SYMBOL S3AF-PJ S3BF-PJ S3DF-PJ S3GF-PJ S3JF-PJ S3KF-PJ S3MF-PJ UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at TC=115℃ IF(AV) 3.0 A Peak Forward Surge Current (Note1) IFSM 80 A Maximum Forward Voltage at 3.0 A VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage T A=25℃ TA=125℃ IR 125 uA Typical Junction Capacitance (Note2) CJ 32 p F Typical Thermal Resistance (Note3) RθJA RθJC 16 ℃/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured at 1MHz and applied reverse voltage of 4V.D.C.

FEATURES

 For surface mount applications  Glass passivated chip junction  Low profile package  Easy to pick and place  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA PIN DESCRIPTION

1 Cathode

2 Anode

Marking Code: S3A-S3M Simplified outline SMAF and symbol S3AF-PJ thru S3MF-PJ 1 / 3www.pingjingsemi.com Revision:1.0 Oct-2017

RATINGS AND CHARACTERISTIC CURVES 0.1 0.6 1.0 1.2 1.6 Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.4 Fig.2 Typical Instaneous Reverse Characteristics Instaneous Current ( A)Reverse μ 200 400 600 8000 0.01 0.1 1.0 Instaneous Reverse Voltage (V) 100 T =25J °C T =75J °C T =125J °C T =150J °C 100 120 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak A)Forward Surge Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.3 Typical Forward Characteristic 1.0 1.40.8 1.8 T =25J °C Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.4 Typical Junction Capacitance 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 0.0 Single phase half-wave 60 Hz resistive or inductive load S3AF-PJ thru S3MF-PJ 2 / 3www.pingjingsemi.com Revision:1.0 Oct-2017

3.30 3.70 4.40 4.90 1.30 1.60 2.40 2.80 0.18 0.30 0.90 1.10 Dimensions in millimeters PACKAGE OUTLINE Device Package Shipping S3AF-PJ thru S3MF-PJ SMAF 3,000/T ape & Reel (7 inches) 10,000/ Tape & Reel (13 inches) SMAF

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3 / 3www.pingjingsemi.com Revision:1.0 Oct-2017