S3AB_16 TMT | Alldatasheet
Document overview
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Technical content
FEATURES
- Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) V RRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A trr μs CJ pF RθJL °C/W TJ °C TSTG °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1410018 Version: J15 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Taiwan Semiconductor 1.15 250 Typical junction capacitance (Note 3) 40 V IR μA Storage temperature range - 55 to +150 Typical reverse recovery time (Note 2) 1.5 Typical thermal resistance 10 - 55 to +150Operating junction temperature range Maximum instantaneous forward voltage (Note 1) @ 3 A VF Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 80 A Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S3 AB BB S3AB - S3MB 3A, 50V - 1000V Surface Mount Rectifiers DB GB JB KB - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AA (SMB) MB Unit
PART NO. PART NO. (TA=25°C unless otherwise noted) Document Number: DS_D1410018 Version: J15 AEC-Q101 qualified Green compoundS3MBHR5G S3MB H R5 G M4 SMB 3,000 / 13" Plastic reel Note 1: "x" defines voltage from 50V (S3AB) to 1000V (S3MB) EXAMPLE PREFERRED P/N PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX
DESCRIPTION
(Note 1) H G SMB 850 / 7" Plastic reel R4 SMB 3,000 / 13" Paper reel Taiwan Semiconductor S3AB - S3MB RATINGS AND CHARACTERISTICS CURVES
ORDERING INFORMATION
PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE 0.5 1.5 2.5 3.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (°C) FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 100 1 10 100 PEAK FORWARD SURGE URRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS TJ=25°C TJ=125°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle
A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1410018 Version: J15 MARKING DIAGRAM D 1.8 0.071 E 6.8 0.268 B 2.5 0.098 C 4.3 0.169 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 S3AB - S3MB Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DO-214AA (SMB) 100 1 10 100 CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p
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