S3A_16 TMT | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
- Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High current capability - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test V RRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A trr μs CJ pF TJ °C TSTG °C Document Number: DS_D1410016 Version: K15 S3A - S3M 3A, 50V - 1000V Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020 Taiwan Semiconductor S3G S3J S3K S3M - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AB (SMC) DO-214AB (SMC) Polarity: Indicated by cathode band Weight: 0.21 g (approximately) UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S3A S3B S3D Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A V IR μA Maximum instantaneous forward voltage (Note 1) IF= 3 A VF 1.15 250 Maximum reverse current @ rated VR Typical reverse recovery time (Note 2) 1.5 Typical thermal resistance RθJL RθJA Typical junction capacitance (Note 3) 60 TJ=25°C TJ=125°C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. °C/W Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle
PART NO. PART NO. RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Document Number: DS_D1410016 Version: K15 S3A - S3M Taiwan Semiconductor
ORDERING INFORMATION
PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING H G SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel M6 SMC 3,000 / 13" Plastic reel Note 1: "xx" defines voltage from 50V (S3A) to 1000V (S3M) EXAMPLE PREFERRED PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX
DESCRIPTION
(Note 1) AEC-Q101 qualified Green compoundS3MHR7G S3M H R7 G 0.5 1.5 2.5 3.5 0 25 50 75 100 125 150 AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (°C) FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 100 1 10 100 PEAK FORWARD SURGE URRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS TJ=125°C TJ=25°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle
A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1410016 Version: K15 S3A - S3M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DO-214AB (SMC) SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.3 0.130 B 2.5 0.098 C 6.8 0.268 MARKING DIAGRAM D 4.4 0.173 E 9.4 0.370 100 0.01 0.1 1 10 100 CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p
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