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Technical content
Features
- High Surge Capability DO-9 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S320J (R) S320K (R) Unit Repetitive peak reverse voltage V RRM 600 800 V RMS reverse voltage VRMS 420 566 V DC blocking voltage VDC 600 800 V 2. Reverse polarity (R): Stud is anode. S320J thru S320QR S320Q (R) 1000 707 S320M (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Silicon Standard Recovery Diode Conditions 1200 848 12001000
- Types from 600 V to 1200 V VRRM DC blocking voltage VDC 600 800 V Continuous forward current IF 320 320 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S320J (R) S320K (R) Unit Diode forward voltage 1.2 1.2 10 10 μA 12 12 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.16 0.16 °C/W A4700 Reverse current IR VF 4700 ‐55 to 150 S320Q (R) 10 10VR = 600 V, Tj = 25 °C IF = 300 A, Tj = 25 °C TC ≤ 100 °C Conditions 4700 4700 -55 to 150 320 320 0.16 VR = 600 V, Tj = 175 °C 0.16 1.2 1.2 -55 to 150 ‐55 to 150 TC = 25 °C, tp = 8.3 ms 12001000 Surge non-repetitive forward current, Half Sine Wave IF,SM V Electrical characteristics, at Tj = 25 °C, unless otherwise specified S320M (R) www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S320J thru S320QR DO-9 (DO--205AB) G D H I F B A E C Inches Millimeters Min Max Min Max A M 20 * P 1.5 C 1.24 1.25 31.5 31.90 D 5.31 5.98 135 152 E 0.78 0.828 19.60 21.03 F 0.470 0.530 11.94 13.46 I 0.330 0.350 8.38 8.89 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3