S320J_18 GENESIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability DO-9 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S320J (R) S320K (R) Unit Repetitive peak reverse voltage VRRM 600 800 V RMS reverse voltage VRMS 420 566 V DC blocking voltage VDC 600 800 V Continuous forward current IF 320 320 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S320J (R) S320K (R) Unit Diode forward voltage 1.2 1.2 10 10 μA 12 12 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.16 0.16 °C/W 2. Reverse polarity (R): Stud is anode. A4700 Reverse current IR VF 4700 -55 to 150 S320Q (R) 10 10 S320J thru S320QR VR = 600 V, Tj = 25 °C IF = 300 A, Tj = 25 °C TC ≤ 100 °C Conditions S320Q (R) 1000 707 S320M (R) 4700 4700 -55 to 150 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 320 320 Silicon Standard Recovery Diode 12001000 0.16 VR = 600 V, Tj = 175 °C 0.16 1.2 1.2
- Types from 600 V to 1200 V VRRM V Electrical characteristics, at Tj = 25 °C, unless otherwise specified S320M (R) Surge non-repetitive forward current, Half Sine Wave IF,SM -55 to 150 -55 to 150 Conditions TC = 25 °C, tp = 8.3 ms 1200 848 C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 1Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s320j.pdf
C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 2Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s320j.pdf
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S320J thru S320QR C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 3Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s320j.pdf