S30NC15 SHINDENGEN | Alldatasheet
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Twin Diode Schottky Barrier Diode MS OUTLINE Weight 6.1g(Typ) 150V 30A Das coae 1 mE) © VF=0.88V © Low Vr=0.88V nr @ > al ffflA=0.5MA © Low In=0.5mA Type Ne | O13 eMRETECLITCL © Resistance for thermal run-away ith S30NC15 O24 yFLIBE © Switching Regulator *DC/DCAYI\\-9 © DC/DC Converter 8 RB. OA ‘* Home Appliance, Office Automation Pie. mts © Communication | D® 8 D @® @ SHEN Ov TAMMIE Webtt4 b LIL H 1 A— FAY 7 RR) EBNF S01, HARPER OU CU RHRPIMENE CO FS For details of the outine dimensions, refer to our web site or the diode technica data book. Aa forthe making, refer othe specication “Marking, {Terminal Connection” MwX RATINGS @iEXtRATH Absolute Maximum Ratings (ioe Te = 25) HOA me ]AF mF na Item [Symbol] Conditions uyeSNG SEIN Unit Term a - Sitage Tonge pref sets eer TIL :
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isonumPowrevorge | Mee] TV SOHz ERM, MET, 74 1S, . Ha I IRE) OMI Rate FH lo/2, Te = 123T A Average Rectified Forward Current © | S0#z sine wave, Resistance load, With heatsink, Per diode tora, fos 123 TART SR T S0Hz ISK, FERN MK LIA A 2 AEA MRR, T]=25C A Peak Surge Forward Current irs _| Sorz sine wave, Non-repetiive 1 cycle peak value, 7)=25°C f HAT he SES OSN-m) @B AHA Electrical Characteristics (Hoe Te =25C) NEEL: = AN AMIE, 1H HD OBE it ‘a Nitra Votage Te=15A. _palsoieasutemnt Por de v wR =v, 2 AME, REND ORE art 5 | G=1MHz, Ve=10V, BRT) OMI ‘Gnton Capactance {=IMHz, V=10V. pet dose. pF Mesedii a REA 7 — AN a KRRAR IS RAKRO LDC HMMS LIERBFSOEHHY EF. All specifications are subject to change without notice. 142 (533) wwwshindengen.co.jpiproduct/semil
Center Tap Common Cathode S30NC15 Wi§ttB CHARACTERISTIC DIAGRAMS WAS Tate (ABD RA TARY AER Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability mma) eae) eae: O S| as pe : eae Bll /faneenom | GH?) AEG) BSS EEE Bele TETMMMGzcome) «| cEREERTSERTSEETEn? © EEE rie mga ay 05 T 1s 2 Li 0 Ey Ey 0 EN 2 31a wT Forward Voltage Vr (V) Average Rectified Forward Current To (A) Number of Cycles (cycle) PAR PRN AAR #ASE Reverse Current Reverse Power Dissipation Junction Capacitance naa ena | peas ae |e 5 eee rele ||) Peet clue Mes Jem te ell AA | LTS Cee el A| LLL LA ees TeeEte etek g V7) A sin € pee | nna Anion | CEA ER A Bate | ee ae ee) | amie eimane ang w Tho ™ “> 10011510 Grease Reverse Voltage VR (V) Reverse Voltage Vk (V) Reverse Voltage Vk (V) F4AL—F4YIN—TJ Te-lo Derating Curve Te-lo yee Salis, Esau anes enes Gent emes trent eiateth 3 fee ET és OEE 2 oN | BSSanEE TE Se J HRREEHE a Case Temperature Te (°C) * Sine wave (x 50Hz TH LT EF.
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KICRAR IS MAKROLOCHMUS LIRETFSCEPHY EF. # Semiconductor products generally have characteristic variation, All specifications are subject to change without notice. ‘Typical is a statistical average of the device's ability. www.shindengen.co.jp/productisemi! (833) 143