S30D35A THINKISEMI | Alldatasheet
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/hexstar2 Low forward voltage drop /hexstar2 Standard MBR matured technology with high reliablity /hexstar2 High current capability /hexstar2 Case: Heatsink TO-3PN/TO-3PB /hexstar2 High surge current capability /hexstar2 Weight: 6.5 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant Application /hexstar2 Automotive Inverters/Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems TO-3PN/TO-3PB Bottom Side Metal Heat Sink Positive Negative Doubler Common Cathode Case Case Case Common Anode Suffix "C" Tandem Polarity Case Series Tandem Polarity Suffix "A" Suffix "D" Suffix "S" V RRM 35 45 50 60 90 100 150 200 V V RMS 24 31 35 42 63 70 105 140 V V DC 35 45 50 60 90 100 150 200 V I F(AV) A I RRM A 0.95 1.05 0.92 - 1.02 1.10 0.98 - 0.1 dV/dt V/μs R θJC T J T STG MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25℃ unless otherwise noted) PARAMETER SYMBOL S30D 35A S30D 45A S30D 50A S30D 60A S30D 90A S30D 100A S30D 150A S30D 200A UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 30 Peak repetitive forward current (Rated V R , Square wave, 20KHz) I FRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 200 A Peak repetitive reverse surge Current (Note 1) 2 1 Maximum instantaneous forward voltage (Note 2) I F =15A, T J =25℃ I F =15A, T J =125℃ I F =30A, T J =25℃ I F =30A, T J =125℃ V F 0.73 - - V - 0.75 0.85 0.60 0.65 0.75 0.82 Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Storage temperature range - 55 to +150 Maximum reverse current @ rated VR T J =25 ℃ T J =125 ℃ I R mA 10 .5 Typical thermal resistance 1.4 Operating junction temperature range - 55 to +150 15 10 Voltage rate of change,(Rated V R ) 10,000 /W℃
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/2Rev.07C (TA=25℃ unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 25 50 75 100 125 150 AVERAGE FORWARD A CURRENT (A) CASE TEMPERATURE (℃) FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 100 125 150 175 200 225 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG 8.3ms Single Half Sine Wave JEDEC Method 0.001 0.01 0.1 100 0 20 40 60 80 100 120 140 REVERSE LEAKAGE CURRENT (mA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG TJ=125℃ TJ=25℃ S30D35A-S30D45A S30D50A-S30D200A 0.01 0.1 100 FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG TJ=125℃ S30D35A-S30D45A S30D50A-S30D60A S30D90A-S30D200A TJ=25℃ 100 1000 10000 0.1 1 10 100 JUNCTION CAPACITANCE (pF) A REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG f=1.0MHz Vsig=50mVp-p S30D35A-S30D45A S30D50A-S30D60A S30D90A-S30D200A 0.1 100 0.01 0.1 1 10 100 TRANSIENT THERMAL IMPEDANCE(℃/W) T-PULSE DURATION(s) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG S30D35A thru S30D200A