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- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-9 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage V RRM V RMS reverse voltage VRMS V DC blocking voltage VDC V 2. Reverse polarity (R): Stud is anode. S300Y thru S300ZR Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Silicon Standard Recovery Diode Conditions S300Y (R) 1600 1131 1600
- Types from 1600 V to 2000 V VRRM 2000 1414 2000 S300Z (R) DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W0.16 VR = 1600 V, Tj = 175 °C V A -55 to 150 6850 300 VR = 1600 V, Tj = 25 °C IF = 300 A, Tj = 25 °C TC ≤ 130 °C Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 25 °C, tp = 8.3 msSurge non-repetitive forward current, Half Sine Wave IF,SM IR VF 1600 300 6850 -55 to 150 0.16 2000 1.2 S300Z (R) -55 to 150 -55 to 150 S300Y (R) 1.2 12Reverse current www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S300Y thru S300ZR DO-9 (DO--205AB) G D H I F B A E C Inches Millimeters Min Max Min Max A M 20 * P 1.5 C 1.24 1.25 31.5 31.90 D 5.31 5.98 135 152 E 0.78 0.828 19.60 21.03 F 0.470 0.530 11.94 13.46 I 0.330 0.350 8.38 8.89 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3