S300B_18 GENESIC | Alldatasheet

Document overview

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  • PDF pages: 3

Technical content

Features

  • High Surge Capability DO-9 Package
  • Types up to 600 V VRRM
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit Repetitive peak reverse voltage VRRM 100 200 300 400 V RMS reverse voltage VRMS 70 140 212 280 V DC blocking voltage VDC 100 200 300 400 V Continuous forward current IF 300 300 300 300 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit Diode forward voltage 1.2 1.2 1.2 1.2 10 10 10 10 μA 12 12 12 12 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.16 0.16 0.16 0.16 °C/W Silicon Standard Recovery Diode -55 to 150 Conditions TC = 25 °C, tp = 8.3 ms 6850 6850 600 420 600 2. Reverse polarity (R): Stud is anode. IF,SM Reverse current IR VF -55 to 150 S300J (R) VR = 100 V, Tj = 175 °C 0.16 1.2 V A6850 S300B thru S300JR VR = 100 V, Tj = 25 °C IF = 300 A, Tj = 25 °C TC ≤ 130 °C Conditions S300J (R) 6850 6850 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 300 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 1Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300b.pdf

C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 2Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300b.pdf

Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S300B thru S300JR C A A C Stud Stud (R) C A A C Stud Stud (R) DO-9 (DO--205AB) 9(DO205AB) G A E D H I F B C 3Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300b.pdf