S2N7002W_15 SECOS | Alldatasheet

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Technical content

115 mA, 60 V , R DS(ON) = 7.5 Ω N-Ch Small Signal MOSFET 18-Dec-2009 Rev. B Page 1 of 3 Top View A L C B D G H JF K E 1 2 SOT -323 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

♦ Low on-resistance ♦ Low gate threshold voltage ♦ Low input capacitance ♦ Fast switching speed ♦ Low input/output leakage ♦ Ultra-small surface mount package

PACKAGE INFORMATION

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(R GS =1.0MΩ) V DGR 60 Vdc Continuous Drain Current 1 (TA=25° C) ±115 Continuous Drain Current1(TA=100° C) ID ±75 Pulsed Drain Current 2 IDM ±800 mAdc Continuous Gate-Source Voltage V GS ±20 Vdc Non-repetitive Gate-Source Voltage(t P≦50µs) V GSM ±40 Vpk THERMAL CHARACTERISTICS Total Device Dissipation FR-5 Board 3(TA=25° C) 225 mW Derating above 25° C PD 1.8 mW/° C Thermal Resistance, Junction to Ambient R θJA 556 ° C/W Junction and Storage Temperature TJ, T STG -55~150 ° C Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦2.0% A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 Gate Source Drain X=Date Code Drain Gate Source Drain Gate Source X X

115 mA, 60 V , R DS(ON) = 7.5 Ω N-Ch Small Signal MOSFET 18-Dec-2009 Rev. B Page 2 of 3

ELECTRICAL CHARACTERISTICS

(T A = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP . MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 60 - - Vdc V GS = 0, I D = 10 µAdc TJ =25° C - - 1.0 Zero Gate Voltage Drain Current T J =125° C IDSS - - 500 µAdc VGS =0, V DS = 60Vdc Gate-Body Leakage Current, Forward IGSSF - - 100 nAdc VGS =20Vdc Gate-Body Leakage Current, Reverse IGSSR - - -100 nAdc VGS =-20Vdc ON CHARACTERISTICS 1 Gate Threshold Voltage V GS(th) 1.0 1.6 2.5 Vdc V DS = V GS , I D =250 µAdc On-State Drain Current I D(ON) 500 - - mA V DS ≧2.0VDS(ON) ,V GS =10Vdc - - 3.75 VGS =10Vdc, I D =500mAdc Static Drain-Source On-State Voltage VDS(ON) - - 0.375 Vdc VGS =5Vdc, I D =50mAdc - 1.4 7.5 V GS =10Vdc, I D =500mAdc Static Drain-Source On-State Resistance (T A=25° C) rDS(ON) - 1.8 7.5 Ω VGS =5Vdc, I D =50mAdc - - 13.5 VGS =10Vdc, I D =500mAdc Static Drain-Source On-State Resistance (T A=125° C) rDS(ON) - - 13.5 Ω VGS =5Vdc, I D =50mAdc Forward Transconductance g FS 80 - - mmhos VDS 2V≧ DS(ON), ID =200mAdc DYNAMIC CHARACTERISTICS Input Capacitance C iss - 17 50 pF V DS =25Vdc, V GS =0, f=1MHz Output Capacitance C oss - 10 25 pF V DS =25Vdc, V GS =0, f=1MHz Reverse Transfer Capacitance C rss - 2.5 5.0 pF V DS =25Vdc, V GS =0, f=1MHz SWITCHING CHARACTERISTICS 1 Turn-On Delay Time td (ON) - 7 20 Turn-Off Delay Time td (OFF) - 11 40 nS VDD =25Vdc, ,I D ≅500mAdc R G =25 Ω,RL=50 Ω, VGEN =10V BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage V SD - - -1.5 Vdc I S=11.5mAdc,V GS =10V Source Current Continuous I S - - -115 mAdc Source Current Pulsed I SM - - -800 mAdc Notes: 1. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦2.0%

115 mA, 60 V , R DS(ON) = 7.5 Ω N-Ch Small Signal MOSFET 18-Dec-2009 Rev. B Page 3 of 3 CHARACTERISTIC CURVE (N-Ch, cont’d)