S2N7002SW SECOS | Alldatasheet

Document overview

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Technical content

0.38A, 60V , R DS(O/glyph1197) 2.8 ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 26-Jul-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

S2µ7002SW provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Halogen free products available /circle6 ESD protected /circle6 Low R DS(on)

APPLICATIONS

/circle6 Low side load switch /circle6 Level shift circuits /circle6 DC-DC converter /circle6 Portable applications MARKING

PACKAGE INFORMATION

(T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Steady state, TA=25°C 0.32 Steady state, TA=85°C 0.23 t＜5s, TA=25°C 0.38 Continuous Drain Current t＜5s, TA=85°C ID 0.27 A Pulsed Drain Current@ tp=10µs I DM 1.5 A Source Current (Body diode) IS 0.3 A Steady state 300 Total Device Power Dissipation 1 t＜5s PD 420 mW Steady state 417 Thermal Resistance from Junction to Ambient 1 t＜5s RθJA 300 °C / W Gate-Source ESD Rating (HBM, method 3015) ESD 2 kV Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s TL 260 °C Operating Junction and Storage Temperature TJ, T STG -55~150 °C SOT-323 701 Top View A L C B D G H JF K E 1 2 A 1.80 3.00 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50

0.38A, 60V , R DS(O/glyph1197) 2.8 ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 26-Jul-2016 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D=250µA Drain-Source Breakdown Voltage Temperature Coefficient BV DSS / T J - 71 - mV / °C Gate-Source Leakage Current IGSS - - ±10 µA V DS =0, VGS = ±20V - - 1 V DS =60V, V GS =0, TJ=25°C - - 500 V DS =60V, V GS =0, TJ=125°C Drain-Source Leakage Current IDSS - - 0.1 µA VDS =50V, V GS =0, TJ=25°C On Characteristics 2 Gate-Threshold Voltage V GS(th) 1 - 2 V V DS =VGS , I D=250µA µegative Threshold Voltage Temperature Coefficient V GS(th) / T J - 4 - mV / °C Forward Transconductance gfs 0.08 - - S V DS =5V, I D=0.2A - - 2.8 V GS =10V, I D=500mA Static Drain-Source On-Resistance

3 RDS(Oµ)

  • - 3.2 Ω VGS =4.5V, ID=200mA Dynamic Characteristics Input Capacitance C iss - 21 - Output Capacitance C oss - 12 - Reverse Transfer Capacitance C rss - 0.35 - pF VDS =25V VGS =0 f=1MHz Total Gate Charge Q g(TOT) - 0.44 - Gate-Source Charge Q gs - 0.2 - Gate-Drain Charge Q gd - 0.1 - nC VDS =10V VGS =4.5V ID=0.5A Switching Characteristics Turn-on Delay Time T d(on) - 2.7 - Rise Time T r - 2.5 - Turn-off Delay Time T d(off) - 13 - Fall Time T f - 8 - nS VDD=30V VGEµ =10V RG =25Ω RL =60Ω ID=0.5A Drain-Source Diode Characteristics Diode Forward Voltage V SD - 0.85 - V I S=0.5A, V GS =0 µotes: 1. FR-4 board is 1 × 0.75 × 0.062 inch. 2. Pulse Test: Pulse width ≦300µs, duty cycle ≦2%.

0.38A, 60V , R DS(O/glyph1197) 2.8 ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 26-Jul-2016 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

0.38A, 60V , R DS(O/glyph1197) 2.8 ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 26-Jul-2016 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES