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115mA, 60V N-Channel Enhancement MOSFET 09-Apr-2014 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free

FEATURES

 Low on-resistance  Fast switching Speed  Low-voltage drive  Easily designed drive circuits  ESD protected:1500V MARKING RK

PACKAGE INFORMATION

SOT-323 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage V DSS 60 V Continuous Gate – Source Voltage V GSS ±20 V Continuous Drain Current I D 115 mA Pulsed Drain Current I DP 800 mA Continuous Reverse Drain Current I DR 115 mA Pulsed Reverse Drain Current I DRP 800 mA Total Power Dissipation P D 225 mW Channel & Storage Temperature Range T CH, TSTG 150, -55~150 °C Note: 1. Pw ≦10μS, Duty cycle≦1% 2. When mounted on a 1x0.75x0.062 inch glass epoxy board ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified, per element) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION OFF CHARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 60 - - V V GS=0V, ID =10μA Zero Gate Voltage Drain Current I DSS - - 1.0 μA V DS=60V, VGS=0V Gate-Source Leakage I GSS - - ±10 μA V DS=0V , VGS=±20V ON CHARACTERISTICS Gate-Threshold Voltage V GS(TH) 1 1.85 2.5 V V DS= VGS, ID =250μA - - 7.5 V GS=10V, ID=0.5A Static Drain-Source On Resistance R DS(ON) - - 7.5 Ω VGS=5V, ID=0.05A Forward Transfer Admittance g FS* 80 - - ms V DS=10V, ID=0.2A DYNAMIC CHARACTERISTICS Input Capacitance C ISS - 25 50 V DS=25V Output Capacitance C OSS - 10 25 V GS=0V Reverse Transfer Capacitance C RSS - 3.0 5 pF f=1MHz SWITCHING CHARACTERISTICS Turn-on Delay Time T d(ON) * - 12 20 Turn-off Delay Time T d(OFF) * - 20 30 nS VDD=30V, I D=0.2A RL=150Ω, V Gs=10V, RG=10Ω * Pw≦300μS, Duty cycle≦1% SOT-323 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 Gate Source Drain

115mA, 60V N-Channel Enhancement MOSFET 09-Apr-2014 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES