S2N7002K SECOS | Alldatasheet

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Technical content

115mA, 60V N-Channel Enhancement Mode Power MOSFET 08-Mar-2010 Rev. B Page 1 of 3 GATE SOURCE DRAIN * Gate Pretection Diode RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 Low on resistance. /circle6 Fast switching speed. /circle6 Low-voltage drive. /circle6 Easily designed drive circuits. /circle6 Easy to parallel. /circle6 Pb-Free package is available. /circle6 ESD protected:2000V DEVICE MARKING: RK MAXIMUM RATINGS (T A = 25° C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDSS 60 V Gate – Source Voltage VGSS ±20 V Continuous I D 115 mA Drain Current Pulsed I DP 1 0.8 A Continuous I DR 115 mA Drain Reverse Current Pulsed I DRP 1 0.8 A Total Power Dissipation PD 2 225 mW Channel & Storage Temperature T CH , T STG 150, -55~150 ° C

ELECTRICAL CHARACTERISTICS

(TA = 25° C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Gate-Source Leakage Current I GSS - - ±10 µA V GS =±20V, VDS =0V Drain-Source Breakdown Voltage V (BR)DSS 60 - - V V GS =0V, I D =10 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =60V, V GS =0V Gate Threshold Voltage V GS(TH) 1 1.85 2.5 V V DS = V GS, ID =250 µA - - 7.5 V GS =10V, I D =0.5A Drain-Source On-State Resistance* R DS(ON) * - - 7.5 Ω VGS =5V, I D =0.05A Forward Transfer Admittance |Y FS |* 80 - - mS V DS =10V, I D =0.2A Input Capacitance C ISS - 25 50 Output Capacitance C OSS - 10 25 Reverse Transfer Capacitance C RSS - 3.0 5.0 pF VDS =25V VGS =0V f=1MHz Turn-on Delay Time T d(ON) * - 12 20 Turn-off Delay Time T d(OFF) * - 20 30 nS VDD ≒30V, V Gs =10V I D =200mA, RL=150 Ω, R GS =10 Ω * Pulse width ≦300µS, Duty cycle ≦1% SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT SOT-23 A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H JF K E 1 2

115mA, 60V N-Channel Enhancement Mode Power MOSFET 08-Mar-2010 Rev. B Page 2 of 3 CHARACTERISTIC CURVES

115mA, 60V N-Channel Enhancement Mode Power MOSFET 08-Mar-2010 Rev. B Page 3 of 3 CHARACTERISTIC CURVES