2N7002E_V01 ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Low RDS(on)
  • Small Footprint Surface Mount Package
  • Trench Technology
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

  • Low Side Load Switch
  • Level Shift Circuits
  • DC−DC Converter
  • Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current (Note 1) Steady State T A = 25°C TA = 85°C t < 5 s T A = 25°C TA = 85°C ID 260 190 310 220 mA Power Dissipation (Note 1) Steady State t < 5 s PD 300 420 mW Pulsed Drain Current (tp = 10 /C0109s) IDM 1.2 A Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) R/C0113JA 417 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) R/C0113JA 300 1. Surface −mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Device Package Shipping †

ORDERING INFORMATION

2N7002ET1G, S2N7002ET1G 3000 / Tape & Reel Simplified Schematic SOT−23 CASE 318 STYLE 21

703 M/C0071

/C0071 703 = Device Code M = Date Code /C0071 = Pb−Free Package MARKING DIAGRAM & PIN ASSIGNMENT Drain Gate Source SOT−23 (Pb−Free) 60 V 3.0 /C0087 @ 4.5 V RDS(on) MAX 310 mA ID MAX (Note 1) V(BR)DSS †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2.5 /C0087 @ 10 V (Top View) N−Channel (Note: Microdot may be in either location) www.onsemi.com 2N7002ET7G, S2N7002ET7G 3500 / Tape & ReelSOT−23 (Pb−Free)

www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 /C0109A 60 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 75 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25°C 1 /C0109A TJ = 125°C 500 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 /C0109A 1.0 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.4 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 240 mA 0.86 2.5 /C0087 VGS = 4.5 V, ID = 50 mA 1.1 3.0 Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 25 V 26.7 40 pF Output Capacitance COSS 4.6 Reverse Transfer Capacitance CRSS 2.9 Total Gate Charge QG(TOT) VGS = 5 V, VDS = 10 V; ID = 240 mA 0.81 nC Threshold Gate Charge QG(TH) 0.31 Gate−to−Source Charge QGS 0.48 Gate−to−Drain Charge QGD 0.08 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn−On Delay Time td(ON) VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 /C0087 1.7 ns Rise Time tr 1.2 Turn−Off Delay Time td(OFF) 4.8 Fall Time tf 3.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.79 1.2 V TJ = 85°C 0.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 /C0109s, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with

2.0 V TJ = −55°CTJ = 125°C

SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 1 2 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. GENERIC MARKING DIAGRAM* NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. SOLDERING FOOTPRINT VIEW C L 0.25 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 NOM MAX H STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE −ANODE STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE −ANODE STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 20: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5: CANCELLED STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE c T TOP VIEW SIDE VIEW END VIEW 2.90 0.80 DIMENSIONS: MILLIMETERS 0.90 PITCH 3X 0.95 RECOMMENDED STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOT−23 (TO−236) © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative