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115mA, 60V Dual N-Channel MOSFET 19-May-2011 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANICAL DATA Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING:
PACKAGE INFORMATION
SOT-363 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage V DS 60 V Drain – Gate Voltage RGS＝1MΩ V DGR 60 V Gate – Source Voltage V GS ±20 V Continuous Drain Current I D 115 mA Power Dissipation P D 380 mW Maximum Junction-to-Ambient R θJA 328 °C / W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C Note: 1. Pulse Width Limited by Maximum Junction Temperature. SOT-363 A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 702
115mA, 60V Dual N-Channel MOSFET 19-May-2011 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS 60 - - V V GS=0, ID=10μA Gate-Threshold Voltage V GS(TH) 1 - 2 V V DS=VGS, ID=250μA Gate-Source Leakage I GSS - - ±1 μA V DS=0 , VGS= ±20V TC= 25°C - - 1 V DS=60V, VGS=0 Zero Gate Voltage Drain Current TC= 125°C IDSS - - 500 μA VDS=60V, VGS=0 On-State Drain Current I D(on) 0.5 - - A V GS=10V, VDS=7.5V TJ= 25°C - - 7.5 V GS=5V, ID=0.05A Drain-Source On Resistance TJ= 125°C RDS(ON) - - 13.5 Ω VGS=10V, ID=0.5A Forward Transconductance g FS 80 - - ms V DS≧2 VDS(ON), ID= 0.2A Body-Drain Diode Ratings Diode Forward On–Voltage V SD - - -1.5 V I S=115mA, VGS=0 Source Current Continuous(Body Diode) I S - - -115 mA Source Current Pulsed I SM - - -800 mA Dynamic Characteristics Input Capacitance C ISS - - 50 Output Capacitance C OSS - - 25 Reverse Transfer Capacitance C RSS - - 5 pF VDS=25V, VGS=0, f=1MHz Switching Characteristics Turn-on Delay Time T d(ON) - - 20 Turn-off Delay Time T d(OFF) - - 40 nS VDD=25V, I D=0.5A RL=50Ω, VGEN=10V, RG=25Ω
115mA, 60V Dual N-Channel MOSFET 19-May-2011 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES