S2N7002 SECOS | Alldatasheet
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115 mA, 60 V , R DS(ON) = 7.5 Ω N-Ch Small Signal MOSFET 24-Nov-2009 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 Gate Drain 702 W 702 =Device Code W =Date Code Source RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Pb-Free Package is Available PACKAGING INFORMATION MAXIMUM RATINGS (at T A = 25° C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage V DSS 60 Vdc Drain-Gate Voltage(R GS =1.0 M Ω) V DGR 60 Vdc TC =25° C 1 ±115 mAdc Continuous Drain Current TC =100° C 1 ID ±75 mAdc Pulsed Drain Current 2 I DM ±800 mAdc Continuous Gate-Source Voltage V GS ±20 Vdc Non-Repetitive Gate-Source Voltage(t P 5≦ 0µS) V GSM ±40 Vpk THERMAL CHARACTERISTICS TA=25° C 225 mW Total Device Dissipation FR-5 Board 3 Derate above 25° C PD 1.8 mW/° C Thermal Resistance, Junction to Ambient R θJA 556 ° C/W Junction and Storage Temperature T J, T STG -55~150 ° C Note: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦ 2.0% ELECTRICAL CHARACTERISTICS (at TA = 25° C unless otherwise specified) PARAMETER SYMBOL MIN. TYP . MAX. UNIT TEST CONDITION OFF CHARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 60 - - Vdc V GS = 0, I D = 10 µAdc TJ =25° C - - 1.0 Zero Gate Voltage Drain Current TJ =125° C IDSS - - 500 µAdc VGS =0, V DS = 60Vdc Gate-Body Leakage Current, Forward I GSSF - - 100 nAdc VGS =20Vdc Gate-Body Leakage Current, Reverse I GSSR - - -100 nAdc VGS =-20Vdc ON CHARACTERISTICS 1 Gate Threshold Voltage V GS(th) 1.0 1.6 2.5 Vdc V DS = V GS , I D =250 µAdc On-State Drain Current I D(ON) 500 - - mA V DS 2.0V≧ DS(ON) ,V GS =10Vdc - - 3.75 VGS =10Vdc, I D =500mAdc Static Drain-Source On-State Voltage V DS(ON) - - 0.375 Vdc VGS =5Vdc, I D =50mAdc - 1.4 7.5 V GS =10Vdc, I D =500mAdc Static Drain-Source On-State Resistance A=25° C) R DS(ON) - 1.8 7.5 Ω VGS =5Vdc, I D =50mAdc - - 13.5 VGS =10Vdc, I D =500mAdc Static Drain-Source On-State Resistance A=125° C) R DS(ON) - - 13.5 Ω VGS =5Vdc, I D =50mAdc Forward Transconductance g FS 80 - - mmhos VDS 2V≧ DS(ON), ID =200mAdc DYNAMIC CHARACTERISTICS Input Capacitance C iss - 17 50 pF V DS =25Vdc, V GS =0, f=1MHz Output Capacitance C oss - 10 25 pF V DS =25Vdc, V GS =0, f=1MHz Reverse Transfer Capacitance C rss - 2.5 5.0 pF V DS =25Vdc, V GS =0, f=1MHz SWITCHING CHARACTERISTICS 1 Turn-On Delay Time td (ON) - 7 20 Turn-Off Delay Time td (OFF) - 11 40 nS VDD =25Vdc, ,I D≅500mAdc R G =25 Ω,R L=50 Ω, V GEN =10V BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage V SD - - -1.5 Vdc I S=11.5mAdc,V GS =0V Source Current Continuous(Body Diode) I S - - -115 mAdc Source Current Pulsed I SM - - -800 mAdc Note: 1. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦ 2.0% A 2.80 3.04 G 0.013 0.10 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.80 2.00 L 0.89 1.02 F 0.30 0.50 SOT-23 Gate Source Drain
115 mA, 60 V , R DS(ON) = 7.5 Ω N-Ch Small Signal MOSFET 24-Nov-2009 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES