S2M0120120K SMCDIODE | Alldatasheet

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DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K S2M0120120K 1200VSICPOWERMOSFET

Description

Applications

MaximumRatings(T=25℃ unlessotherwisespecified) Characteristics Symbol Condition Max. Units DrainSourceVoltage VDSS VGS =0V,IDS =100uA,TC =25C 1200 V GateSourceVoltage VGSS TC = 25  C, Absolute maximum values, AC (f>1Hz) -10to+25 V GateSourceVoltage VGSOP TC =25CRecommendedOperationalValues -5to+20 V ContinuousDrainCurrent ID VGS =20V, TC =25C 21 A ID VGS =20V, TC =100C 15 A PulsedDrainCurrent ID,pulse TC=25˚C 66 A PowerDissipation PD TC=25˚C 156 W  USB OTGinterfaces  MonitorsandFlatPanelDisplays  PersonalDigitalAssistants(PDAs)  MonitorsandFlatPanelDisplays  SIM Ports  Portable Electronics  Microcontroller InputProtection S2M0120120KissingleSiCPowerMOSFETpackagedin TO-247-4case. Thedeviceisahighvoltagen-channel enhancementmodeMOSFETthathasverylowtotal conductionlossesandverystableswitching characteristicsovertemperatureextremes.The S2M0120120Kisidealforenergysensitive,high frequencyapplicationsinchallengingenvironments.

  • EVFastChargingModules
  • EVOnBoardChargers
  • SolarInverters
  • OnlineUPS/IndustrialUPS
  • SMPS(SwitchModePowerSupplies)
  • DC-DCConverters
  • ESS(EnergyStorageSystems)
  • Positivetemperaturecharacteristics,easytoparallel.
  • Lowon-resistanceTyp.RDS(on)=133mΩ .
  • Fastswitchingspeedandlowswitchinglosses.
  • Veryfastandrobustintrinsicbodydiode.
  • Processofnon-brightTinelectroplatin VDS =1200V IDS = 21A RDS(on)=133mΩ

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K ElectricalCharacteristics(T=25℃ unlessotherwisespecified) Characteristics Symbol Condition Min. Typ. Max. Unit s DrainSourceBreakdownVoltage V(BR)DSS VGS =0V,ID =100uA 1200 V GateThresholdVoltage VGS(th) VDS =VGS, ID =3.3mA 2.0 2.9 4 V VDS =VGS, ID =3.3mA,TJ =175C 1.9 V ZeroGateVoltageDrainCurrent IDSS VDS =1200V,VGS =0V 1 100 uA GateSourceLeakageCurrent IGSS VGS =20V,VDS =0V 250 nA DrainSourceOn-State Resistance RDS(on) VGS =20V,ID =13.3A 133 150 mΩ VGS =20V,ID =13.3A,TJ =175C 212 mΩ Transconductance gfs VDS=20V,ID=13.3A 5 S VDS=20V,ID=13.3A, TJ =175C 2 S InputCapacitance CISS VGS =0V, VDS =1000V VAC =25mV f=100kHz 652 pFOutputCapacitance COSS 47.6 ReverseTransferCapacitance CRSS 3.47 COSS StoredEnergy EOSS 28 uJ Turn-OnSwitchingEnergy EON VDS = 800 V, VGS = -5/+20 V ID =13.3 A, RG(ext)=2.5 Ω L=434uH, TJ = 25 C 62.3 uJ Turn-OffSwitchingEnergy EOFF 62.7 Turn-OnDelayTime td(on) VDS =800V,VGS =-5/20V ID =13.3A,RG(ext)=2.5Ω,RL=80Ω 3.5 ns RiseTime tr 6.7 Turn-OffDelayTime td(off) 8.3 FallTime tf 10.6 InternalGateResistance RG(int) f=1MHz,VAC=25mV,D-Sshort 6.4 Ω GatetoSourceCharge Qgs VDS =800V,VGS =-5/20V ID =13.3A 12.8 nCGatetoDrainCharge Qgd 6.0 TotalGateCharge Qg 29.6

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K ReverseDiodeCharacteristics: Characteristics Symbol Condition Typ. Max. Units DiodeForwardVoltage VSD VGS=-5V,ISD=6.7A 3.7 V VSD VGS=-5V,ISD=6.7A,TJ=175°C 3.3 V ContinuousDiodeForwardCurrent IS VGS=-5V,TC=25℃ 20 A ReverseRecoveryTime trr VGS=-5V,ISD=13.3A,TJ=25°C VR=800V dif/dt=3030A/µs 7.3 ns ReverseRecoveryCharge Qrr 0.05 uC Peak ReverseRecoveryCurrent Imm 11.9 A Thermal-MechanicalSpecifications: Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctiontoCase RJC DCoperation 0.96 C/W MaximumThermalResistanceJunctiontoAmbient RJA 53 C/W OrderingInformation: Device Package Shipping S2M0120120K TO-247-4 30pcs/tube MarkingDiagram WhereXXXXX isYYWWL S2M = DeviceType 0120 = RDS(on) 120 = ReverseVoltage(1200V) K = Package SSG =SSG YY = Year WW =Week L =Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K RatingsandCharacteristicsCurves Figure1.OutputCharacteristicsTJ =-55ºC Figure2.OutputCharacteristicsTJ =25ºC Figure3.OutputCharacteristicsTJ =175ºC Figure4.NormalizedOn-Resistancevs.Temperature Figure5.On-Resistancevs.DrainCurrent ForVariousTemperatures Figure6.On-Resistancevs.Temperature ForVariousGateVoltage

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K Figure10.BodyDiodeCharacteristicatTJ =175ºC Figure11.ThresholdVoltagevs.Temperature Figure7.TransferCharacteristicfor VariousJunctionTemperatures Figure8.BodyDiodeCharacteristicatTJ =-55ºC Figure9.BodyDiodeCharacteristicatTJ =25ºC Figure12.GateChargeCharacteristic

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K Figure16.OutputCapacitorStoredEnergy Figure17.Capacitancesvs. Drain-Source Voltage(0-200V) Figure18.Capacitancesvs. Drain-Source Voltage(0-1000V) Figure13.3rdQuadrantCharacteristicatTJ =-55ºC Figure14.3rdQuadrantCharacteristicatTJ =25ºC Figure15.3rdQuadrantCharacteristicatTJ =175ºC

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K Figure19.ContinuousDrainCurrentDeratingvs. CaseTemperature Figure20.MaximumPowerDissipationDeratingvs.Case Temperature Figure21.TransientThermalImpedance(Junction-Case) Figure22.SafeOperatingArea Figure23.ClampedInductiveSwitchingEnergyvs. Drain Current(VDD =600V) Figure24.ClampedInductiveSwitchingEnergyvs.Drain Current(VDD =800V)

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K Figure25.ClampedInductiveSwitchingEnergyvs. RG(ext) Figure26.ClampedInductiveSwitchingEnergyvs. Temperature Figure27.SwitchingTimesvs.RG(ext) Figure28.SwitchingTimesDefinition

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K MechanicalDimensionsTO-247AD

DataSheetN2716,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0120120K DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..