S2M0016120D-1 SMCDIODE | Alldatasheet

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DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 S2M0016120D-1 1200VSICPOWERMOSFET

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Applications

MaximumRatings(T=25℃ unlessotherwisespecified) Characteristics Symbol Condition Max. Units DrainSourceVoltage VDSS VGS =0V,IDS =100uA,TC =25C 1200 V GateSourceVoltage VGSS TC =25C,Absolutemaximumvalues,AC(f>1Hz) -10to+25 V GateSourceVoltage VGSOP TC =25CRecommendedOperationalValues -5to+20 V ContinuousDrainCurrent ID VGS =20V, TC =25C 140 A ID VGS =20V, TC =100C 99 A PulsedDrainCurrent ID,pulse TC=25˚C 250 A PowerDissipation PD TC=25˚C 517 W  USB OTGinterfaces  MonitorsandFlatPanelDisplays  PersonalDigitalAssistants(PDAs)  MonitorsandFlatPanelDisplays  SIM Ports  Portable Electronics  Microcontroller InputProtection S2M0016120D-1issingleSiCPowerMOSFETpackaged inTO-247ADcase. Thedeviceisahighvoltagen- channelenhancementmodeMOSFETthathasvery low totalconductionlossesandverystableswitching characteristicsovertemperatureextremes.The S2M0016120D-1isidealforenergysensitive,high frequencyapplicationsinchallengingenvironments.

  • EVFastChargingModules
  • EVOnBoardChargers
  • SolarInverters
  • OnlineUPS/IndustrialUPS
  • SMPS(SwitchModePowerSupplies)
  • DC-DCConverters
  • ESS(EnergyStorageSystems)
  • Positivetemperaturecharacteristics,easytoparallel.
  • Lowon-resistanceTyp.RDS(on)=17mΩ .
  • Fastswitchingspeedandlowswitchinglosses.
  • Veryfastandrobustintrinsicbodydiode.
  • Processofnon-brightTinelectroplatin VDS =1200V IDS =140A RDS(on)=17mΩ

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 ElectricalCharacteristics(T=25℃ unlessotherwisespecified) Characteristics Symbol Condition Min. Typ. Max. Unit s DrainSourceBreakdownVoltage V(BR)DSS VGS =0V,ID =100uA 1200 V GateThresholdVoltage VGS(th) VDS =VGS, ID =23mA 1.8 2.55 3.6 V VDS =VGS, ID =23mA,TJ =175C 1.85 V ZeroGateVoltageDrainCurrent IDSS VDS =1200V,VGS =0V 1 10 uA GateSourceLeakageCurrent IGSS VGS =20V,VDS =0V 10 250 nA DrainSourceOn-State Resistance RDS(on) VGS =20V,ID =75A 11.2 17 23 mΩ VGS =18V,ID =75A 19 mΩ VGS =20V,ID =75A,TJ =175C 28 mΩ VGS =18V,ID =75A,TJ =175C 29 mΩ Transconductance gfs VDS=20V,ID=75A 24 S VDS=20V,ID=75A, TJ =175C 18 S InputCapacitance CISS VGS =0V, VDS =1000V VAC =25mV f=100kHz 4540 pFOutputCapacitance COSS 210 ReverseTransferCapacitance CRSS 29.3 COSS StoredEnergy EOSS 122 uJ Turn-OnSwitchingEnergy EON VDS = 800V, VGS = -5/+20V ID =75A, RG(ext)=2.5Ω L=65.7uH, TJ = 25 C 0.44 mJ Turn-OffSwitchingEnergy EOFF 0.44 Turn-OnDelayTime td(on) VDS =800V,VGS =-5/20V ID =75A,RG(ext)=2.5Ω,L=67.5uH Inductive Load Timing relative to VDSPerIEC60747-8-4pg83 13.76 ns RiseTime tr 21.12 Turn-OffDelayTime td(off) 33.92 FallTime tf 8.96 InternalGateResistance RG(int) f=1MHz,AC=25mV,D-Sshort 1.5 Ω GatetoSourceCharge Qgs VDS =800V,VGS =-5/20V ID =75A 290 nCGatetoDrainCharge Qgd 37.2 TotalGateCharge Qg 285

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 ReverseDiodeCharacteristics: Characteristics Symbol Condition Typ. Max. Units DiodeForwardVoltage VSD VGS=-5V,ISD=37.5A 4.0 V VSD VGS=-5V,ISD=37.5A,TJ=175°C 3.5 V ContinuousDiodeForwardCurrent IS VGS=-5V,TC=25℃ 112 A ReverseRecoveryTime trr VGS=-5V,ISD=75A,TJ=175°C VR=800V dif/dt=2664A/µs 15 ns ReverseRecoveryCharge Qrr 201 nC Peak ReverseRecoveryCurrent Imm 21 A Thermal-MechanicalSpecifications: Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctiontoCase RJC DCoperation 0.29 C/W TypicalThermalResistanceJunctiontoAmbient RJA 38.85 C/W OrderingInformation: Device Package Shipping S2M0016120D-1 TO-247AD 30pcs/tube MarkingDiagram WhereXXXXX is YYWWL S2M =Device Type 0016 = RDS(on) 120 = ReverseVoltage(1200V) D = Package SSG =SSG YY = Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 RatingsandCharacteristicsCurves Figure1.OutputCharacteristicsTJ =-55ºC Figure2.OutputCharacteristicsTJ =25ºC Figure3.OutputCharacteristicsTJ =175ºC Figure4.NormalizedOn-Resistancevs. Temperature Figure5.On-Resistancevs.DrainCurrent ForVariousTemperatures Figure6.On-Resistancevs.Temperature ForVariousGateVoltage

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 Figure7.TransferCharacteristicfor VariousJunctionTemperatures Figure8.BodyDiodeCharacteristicatTJ =-55ºC Figure9.BodyDiodeCharacteristicatTJ =25ºC Figure10.BodyDiodeCharacteristicatTJ =175ºC Temperature Figure11.ThresholdVoltagevs.Temperature Figure12.GateChargeCharacteristic

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 Figure13.3rdQuadrantCharacteristicatTJ =-55ºC Figure14.3rdQuadrantCharacteristicatTJ =25ºC Figure15.3rdQuadrantCharacteristicatTJ =175ºC Figure16.OutputCapacitorStoredEnergy Figure17.Capacitancesvs.Drain-Source Voltage(0-200V) Figure18.Capacitancesvs.Drain-Source Voltage(0-1000V)

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 Figure19.ContinuousDrainCurrentDeratingvs. CaseTemperature Figure20.MaximumPowerDissipationDeratingvs.Case Temperature Figure21.TransientThermalImpedance(Junction-Case) Figure22.SafeOperatingArea Figure23.ClampedInductiveSwitchingEnergyvs. Drain Current(VDD =600V) Figure24.ClampedInductiveSwitchingEnergyvs. Drain Current(VDD=800V)

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 Figure25.ClampedInductiveSwitchingEnergyvs.RG(ext) Figure26.ClampedInductiveSwitchingEnergyvs. Temperature Figure27.SwitchingTimesvs.RG(ext) Figure28.SwitchingTimesDefinition

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 MechanicalDimensionsTO-247AD SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.20 A1 2.00 2.75 A2 1.90 2.10 b 1.00 1.40 b1 1.80 2.40 b2 2.80 3.40 c 0.40 0.75 D 19.80 21.20 D1 16.55 D2 1.20 E 15.20 16.00 E1 13.30 E2 5.00 E3 2.50 e 5.20 5.70 L 13.90 20.70 L1 3.70 4.30 P 3.50 3.70 P1 7.1 7.40 P2 2.50 Q 5.80 S 6.05 6.25 T 10.00 U 6.20

DataSheetN2762,REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S2M0016120D-1 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..