S2A DSK | Alldatasheet
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified S2D S2G S2J S2K S2M Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v olt age V RWS 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 200 400 600 800 1000 V Maximum average forw ord rectified current at V T L =100 O C I (AV) A Peak forw ard surge current @ T L = 110°C 8.3ms V single half-sine-w ave superimposed on rated V load(JEDEC Method) I FSM A Maximum Instantaneous Forw ard Voltage at 2.0A V F V M axim um D C reverse current @T A =25 o C at rated DC blocking voltage @T A =125 o C M axim um reverse recovery tim e (NOTE 1) t rr μS Typical junction capacitance (NOTE 2) C J pF R θJA R θJL Operating junction and storage temperature range T J T STG o C ◇ Plastic package has Underwriters Laboratory
111 Flammability Classification 94V-0
◇ For surface mounted applications 125.0 1.15 1.0 53.0 16.0 ◇ High current capability 2.0 I R copper pad areas NOTE: 1.Rev erse recov ery time test conditions:I F =0.5A,I R =1.0A,I rr =0.25A μA 50.0 S2A - - - S2M 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts 30.0 2.0 111REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 2.0 A ◇ Built-in strain relief,ideal for automated placement ◇ Case:JEDEC DO-214AA,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS DO - 214AA(SMB) Typical thermal resitance (NOTE 3) o C/W S2B ◇ High temperature soldering: 111 250 o C/10 seconds at terminals ◇ Low profile package S2A ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.003 ounces, 0.093 gram ◇ Terminals:Solder Plated, solderable per MIL-STD- 1111750, Method 2026 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
0.01 0.1 101 100 T J =25 C f=1.0MHZ Vsig=50mVp-p Pulse Width=300 S 1%DUTY CYCLE 0.4 0.1 100 0.01 T J =25 C O 0 20 40 60 80 100 100 0.01 0.001 0.1 T J =125 C T J =75 C T J =25 C O O O O 100 11 01 0 0 T L =110 C 8.3ms Single Half Sine Wave (JEDEC Method) S2(A-J) S2(K,M) 1.0 Resistive or inductive Load 2.0 70 80 90 100 110 120 130 140 150 60Hz Resistive or Inductive load P.C.B.MOUNTED THICK COPPERPAND AREAS AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT REVERSE VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, ％ S2A - - - S2M FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE pF AMBIENT TEMPERATURE ℃ NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS www.diode.kr Diode Semiconductor Korea