S2A YEASHIN | Alldatasheet

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Technical content

VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FE ATURES

  • For surface mounted applications
  • High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
  • Glass passivated junction
  • Built-in strain relief
  • Easy pick and place
  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
  • Complete device submersible temperature of 260 for 10 seconds in solder bath
  • High temperature soldering : 260 O C / 10 seconds at terminals
  • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHAN ICAL DATA
  • Case: JEDEC DO-214AA molded plastic
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Indicated by cathode band
  • Standard packaging: 12mm tape (EIA-481) MAXIMUM R ATINGS AND ELECTRICAL CH ARACTERISTI CS Ratings at 25 Jambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS S2A S2B S2D S2G S2J S2K S2M UNITS Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Current at TL = 100 I (AV)

2.0 Amps

Peak For ward Surge Current 8.3ms single h a lf sine wave superimposed on rated load(JEDEC method) I FSM

60.0 Amps

Maximum Instantaneous Forward Voltage at 2.0A V F

1.1 Volts

Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=125 I R 5.0 125 u A Maximum Reverse Recovery Time (Note 1) T RR 2.5 Typical Junction capacitance (Note 2) C J 30.0 PF Typical Thermal Resistance (Note 3) 16 /W Operating and Storage Temperature Range T J STG -55 to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied Vr=4.0 volts 3. 8.0mm2 (.013mm thick) land areas .083(2. 11) .075(1.9 .012(.3 05) .006(.15 2) .012(.31) .006(.15) .008(.203) .002(. 051) .050(1. 27) .030(0. 76) SMB/DO-214AA Unit:inch(mm) .1 55(3. 94) .130(3. 30) .185(4.70) .160(4. 06) . 096 (2. 44) .0 83( 2.13) .2 20(5. 59) .200(5. 08) http://www.yeashin.com 1 REV.03 20150105 DATA SHEET S2A THRU S2M SEMICONDUCTOR u S R θJL

2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.3×0.3" 8.0×8.0mm COPPER PAD AREAS LEAD TEMPERATURE 1.0 2.0 4.0 6.0 10 20 40 60 100 TA = 55 SINGLE SINE-WAVE (JEDEC METHOD) NUMBER OF CYCLES AT 60hz Fig. 1-FORWARD CURRENT DERATING CURVE Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 1,00 0.1 0.01 0.001 T J = 125 T J = 75 T J = 25 PERCENT OF PEAK REVERSE VOLTAGE, % 100 5.0 2.0 1.0 0.5 0.2 0.1 .05 .02 .01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 500 200 100 0.01 0.1 10 100 UNITS MOUNTED ON 20in (5.4mm ) + 0.5mil in (0.013mm) THICK COPPER LAND AREAS REVERSE VOLTAGE, VOLTS 100 0.1 1 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-TRANSIENT THERMAL IMPEDANCE Fig. 6-TYPICAL JUNCTION CAPACITANCE THERMAL IMPEDANCE( /W) JUNCTION CAPACITANCE, pF INSTANTANEOUS REVERSE CURRENT, MICROAMPERES NSTANTANEOUS FORWARD CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES http://www.yeashin.com 2 REV.03 20150105 S2A THRU S2M RATING AND CHARACTERISTIC CURVES