S2800 DIGITRON | Alldatasheet
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144 Market Street
phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130128 S2800 SERIES SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse blocking voltage(1) (TJ = 25 to 100°C, gate open) S2800F S2800A S2800B S2800D S2800M S2800N V RRM, VDRM 100 200 400 600 800 Volts Peak non-repetitive reverse voltage and non-repetitive off-state voltage(1) (TJ = 25 to 100°C, gate open) S2800F S2800A S2800B S2800D S2800M S2800N V RSM, VDSM 125 250 500 700 900 Volts Forward on-state current RMS (all conduction angles), TC = 75°C IT(RMS) 10 Amps Peak forward surge current (one cycle, sine wave, 60Hz, TC = 80°C) ITSM
100 Amps
Circuit fusing considerations (t = 8.3ms) I
40 A2s
Forward peak gate power (t ≤ 10µs) PGM 16 Watts Forward average gate power PG(AV) 0.5 Watts Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit Peak forward or reverse blocking current AK = VDRM or VRRM, gate open) TC = 25°C TC = 100°C IDRM µA mA Instantaneous on-state voltage TM = 30A peak, pulse width ≤ 1ms, duty cycle ≤ 2%) VT 1.7
2 Volts
Gate trigger current (continuous dc) (VD = 12V, RL = 30Ω) IGT 15 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 30Ω) VGT 0.9
1.5 Volts
(VD = 12V, gate open, IT = 150mA) IH 20 mA Gate controlled turn-on time (VD = rated VDRM, ITM = 2A, IGR = 80mA) tgt 1.6 - µs
phone +1.908.245-7200 S2800 SERIES SILICON CONTROLLED RECTIFIER Characteristic Symbol Min. Typ. Max. Unit Circuit commutated turn-off time (VD = VDRM, ITM = 2A, pulse width ≤ 50µs, dv/dt = 200V/µs, di/dt = 10A/µs, TC = 75°C ) tq µs Critical rate of rise of off-state voltage (VD = Rated VDRM, exponential rise, TC = 100°C) dv/dt 100 - V/µs MECHANICAL CHARACTERISTICS Case TO-220AB Marking Body painted, alpha-numeric Pin out See below TO-220AB Inches Millimeters Min Max Min Max A 0.575 0.620 14.600 15.750 B 0.380 0.405 9.650 10.290 C 0.160 0.190 4.060 4.820 D 0.025 0.035 0.640 0.890 F 0.142 0.147 3.610 3.730 G 0.095 0.105 2.410 2.670 H 0.110 0.155 2.790 3.930 J 0.014 0.022 0.360 0.560 K 0.500 0.562 12.700 14.270 L 0.045 0.055 1.140 1.390 N 0.190 0.210 4.830 5.330 Q 0.100 0.120 2.540 3.040 R 0.080 0.110 2.040 2.790 S 0.045 0.055 1.140 1.390 T 0.235 0.255 5.970 6.480 U - 0.050 - 1.270 V 0.045 - 1.140 - Z - 0.080 - 2.030 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130128
phone +1.908.245-7200 S2800 SERIES SILICON CONTROLLED RECTIFIER fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130128