S25VB20_V01 EIC | Alldatasheet
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S25VB20 ~ S25VB60 SILICON BRIDGE RECTIFIERS PRV : 200 ~ 600 Volts Io : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL S25VB20 S25VB60 UNIT Maximum Reverse Voltage VRM 200 600 V Maximum Average Forward Current Tc = 85°C IF(AV) 25 A Maximum Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 400 A Current Squared Time at 1ms < t < 10 ms. I2t 800 A2S Maximum Forward Voltage per Diode at IF = 12.5 A VF 1.05 V Maximum DC Reverse Current at VR = VRRM (Pulse Measurement, Rating of per diode) Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W Operating Junction Temperature Range TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Note : Page 1 of 2 Rev. 03 : November 20, 2008 RATING IR 10 μA Metal Heatsink BR50 φ 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530 (13.40) 0.685(16.70) 0.618 (15.70) 1.137(28.90) 1.114 (28.30) 0.210(5.30) 0.200 (5.10)0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.252(6.40) 0.248(6.30) 0.905(23.0) 0.826(21.0) 0.100(2.50) 0.090(2.30) 0.310(7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( S25VB20 ~ S25VB60 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE Page 2 of 2 Rev. 03 : November 20, 2008 100 10 1.0 400 600 300 200 100 0.1 0.01 0.01 1.0 0.1 100 1400 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 25 °C Pulse test per one diode
50 Hz Sine Wave, Non-repetitive
1 Cycle Peak Value
TJ = 25 °C TJ = 100 °C TJ = 25 °C 500 10 20 601 2 46 4 0 100 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate FORWARD VOLTAGE, VOLTS www.eicsemi.com