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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S25B (R) S25D (R) Unit Repetitive peak reverse voltage V RRM 100 200 V RMS reverse voltage VRMS 70 140 V DC blocking voltage VDC 100 200 V 2. Reverse polarity (R): Stud is anode. S25B thru S25JR S25J (R) 400 280 S25G (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
- Types from 100 V to 600 V VRRM Silicon Standard Recovery Diode Conditions 600 420 600400 DC blocking voltage VDC 100 200 V Continuous forward current IF 25 25 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S25B (R) S25D (R) Unit Diode forward voltage 1.1 1.1 10 10 μA 12 12 mA Thermal characteristics Thermal resistance, junction - case RthJC 2.50 2.50 °C/W A373 Reverse current IR VF 373 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified VR = 50 V, Tj = 25 °C IF = 25 A, Tj = 25 °C TC ≤ 120 °C Conditions 373 373 -55 to 150 -55 to 150 S25J (R) 10 10 S25G (R) 2.50 VR = 50 V, Tj = 175 °C 2.50 1.1 1.1 -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 600400 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S25B thru S25JR DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3