S2370 TOSHIBA | Alldatasheet
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TOSHIBA {DISCRETE/OPTO} q9q=«ODE Psos7e50 0016932 5 T = 9097250 TOSHIBA (DISCRETE/OPTO) 99D 16932 O7-39-13 | ~ TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 82370 TOSHIBA SILICON N CHANNEL MOS TYPE TECHNICAL DATA (1-MOS1) , INDUSTRIAL APPLICATIONS = HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS, Unit_in om : CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR JSOMAK, Santas DRIVE APPLICATIONS. a | J FEATURES: 3 4 {aas + Low Drain-Source ON Resistance : Rps(on)=0.0302(Typ.) i HY) e + High Forvard Transfer Admittance t |Yggl=135 Typ.) | 2020541 | f i 7 + Low Leakage Current : Iggs=#100nA(Max.) @ Vgg=t20V rote fl fl i g , : Tpgg=300uA (Max.) @ Vps~60V sessany | "acazas . Enhancement-Mode + Venel.5°3.5V-@ Vpg=10V)Ip=1mA Fi $3 3 ‘ : ail
1 GATE
MAXIMUM RATINGS (Ta=25°C) 2 DRAIN (HEAT GINK) - [ ciaracrerrstic | sympou [raring [ur J} * SR [Drain-Source Voltage | Vpsx_ | 60 [|v |i sepee : rain-Sote Voreane (iggea0u9] —vooe | 60 |v] eee Drain Power Dissipation aa ie cc Sissi tenerorere | tee —[ 150 J 0 Storsge Temperature Tange | Torq [tous | "0 | THERMAL CHARACTERISTICS - : _— _ : : | Thermal Resistance, Junction to Anbient [| Ren(jay | 50 °C/W _| a Purposes (1.6mm from case for 10 seconds) J a : -301- TOSHIBA CORPORATION
rOSHIBA {DISCRETE/OPTO} 44 ve Waoszeso 0016933 ? i
9097250 TOSHIBA (DISCRETE/OPTO) 99D 16933 DT-34)/3
$2370 TECHNICAL DATA ° ELECTRICAL CHARACTERISTICS (Ta=25°C) CARACTERISTIC [simon [TEST covortton [wane] 3¥P.[ wax, UNIT Gate Leakage Current Igss_|Yes=#20V, Vps-0V | - | - [+100] na | Drain-Source Breakdown Voltage] V(BR)DSS|ID=10mA_» Vos=0V | of - | - [vf [Gate Tareshoid Voitege | Yen _[vos=10V, Torima [us| - | os] v [Forward Tronafer Admittance | Wel [Vosei0¥, Tos20A fof =| - Ls] Tos(o15 fto-70% Vesrion | ~ Jo.oa0)o.o05] 2 | [= fai00 f2700 | Reverse Transfer Capacitance | Crss_|Yps=lov, Vege0V, fe1MHz | - | {2000 | pF [2000 | 2800 | [Rise Tine | ume | 4 | fee Time ft laoy vy, ‘ont t tl 5 gine [tumnzon Tine] ton] oll j- [es] | wiching Tine [Feit Time | te |, lOve, Sh, [- 1st _| tty» tecons Turn-off Toe] tote _|oysig RY [oo [| Total Gate {RSEL-EGEECSPRIBS cace-vrasny | °% | soy, uggeiov |-|s| | + Vos Gate-Drain ("Miller") Charge [- [sx] - | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C) CHARACTERISTICS TEST CONDITION [wan. [Typ ] max. [unr] Gontinsous Drain Reverse Current pp [Eto [| Rulse Drain Reverse Current | tppp | | (| = fico | | Diode Foward Voltage | Vpsr | Ipp=40A »Vgs=0V | - | - fie [ vi Reverse Recovery Tine TpR=40A | - [150] - [ns | Reverse Recovered Charge | Orr __| dlpp/dt=50A/us [| - Joss] - [ vc} 7 ae - 302- GTIA202) . TOSHIBA CORPORATION