S20WB20 SHINDENGEN | Alldatasheet
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Technical content
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Bridge Diode OUTLINE DIMENSIONS RATINGS Square In-line Package SHINDENGEN Unit : mm Case : S20WBS20WB20
- Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40 ~150 ℃ Operating Junction Temperature Tj 150 ℃ Maximum Reverse Voltage VRM 200 V Average Rectified Forward Current IO 50Hz sine wave, R-load With heatsink Tc=76℃ 20 A 50Hz sine wave, R-load Without heatsink Ta=25℃ 4.5 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 500 A Current Squared Time I2t 1ms≦t<10ms Tc=25℃ 800 A 2s Dielectric Strength Vdis Terminals to case, AC 1 minute 2k V Mounting Torque TOR (Recommended torque : 1N・m) 2N ・m
- Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Forward Voltage VF IF=10A, Pulse measurement, Rating of per diode Max.1.05 V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 μA θjc junction to case Max.2 Thermal Resistance θjl junction to lead Max.2 ℃/W θja junction to ambient Max.17
Tc=150°C [TYP] Tc=25°C [TYP] Pulse measurement per diode Forward Voltage V F [V] Forward Current I F [A]
S20WBx Forward Power Dissipation Tj= 150°C Sine wave SIN Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
0 20 40 60 80 100 120 140 160 S20WBx Derating Curve SIN Sine wave R-load with heatsink Case Temperature Tc [ °C] Average Rectified Forward Current I O [A] Tc Heatsink
0 20 40 60 80 100 120 140 160 S20WBx Derating Curve l=5mm l=25mm l=15mm Sine wave R-load Free in air Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A] Glass-epoxy substrate PCB l
Peak Surge Forward Capability 100 200 300 400 500 600 700 1 10 100 S20WBx 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied