S20D35A THINKISEMI | Alldatasheet
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/hexstar2 Low forward voltage drop /hexstar2 Standard MBR matured technology with high reliablity /hexstar2 High current capability /hexstar2 Case: Heatsink TO-3PN/TO-3PB /hexstar2 High surge current capability /hexstar2 Weight: 6.5 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant Application /hexstar2 Automotive Inverters/Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems TO-3PN/TO-3PB Bottom Side Metal Heat Sink Positive Negative Doubler Common Cathode Case Case Case Common Anode Suffix "C" Tandem Polarity Case Series Tandem Polarity Suffix "A" Suffix "D" Suffix "S" V RRM 35 45 50 60 90 100 150 200 V V RMS 24 31 35 42 63 70 105 140 V V DC 35 45 50 60 90 100 150 200 V I F(AV) A I RRM A dV/dt V/μs R θJC T J T STG MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25℃ unless otherwise noted) PARAMETER SYMBOL S20D 35A S20D 45A S20D 50A S20D 60A S20D 90A S20D 100A S20D 150A S20D 200A UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 150 A Maximum instantaneous forward voltage (Note 2) I F =10A, T J =25℃ I F =10A, T J =125℃ I F =20A, T J =25℃ I F =20A, T J =125℃ V F V -0 .80 Operating junction temperature range Storage temperature range - 55 to +150 Maximum reverse current @ rated VR T J =25 ℃ T J =125 ℃ I R mA 0.1 Note 1: 2.0μs Pulse Width, f=1.0KHz Peak repetitive forward current (Rated V R , Square wave, 20KHz) I FRM 20 A Peak repetitive reverse surge Current (Note 1) 1.0 0.5 Typical thermal resistance 1 0.85 0.95 10 5 0.57 0.70 0.75 0.92 0.84 0.95 0.95 1.02 Voltage rate of change,(Rated V R ) 10,000 - 55 to +150 Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle 0.72 0.85 0.85 0.98 /W℃
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/2Rev.07C S20D35A thru S20D200A (TA=25℃ unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 50 100 150 AVERAGE FORWARD CURRENT (A) CASE TEMPERATURE ( o FIG.1- FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 100 150 200 250 300 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 8.3ms Single Half Sine Wave JEDEC Method 0.001 0.01 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (mA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG TJ=125℃ TJ=25℃ S20D35A-S20D45A S20D50A-S20D200A 0.01 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG TJ=125℃ S20D35A-S20D45A S20D50A-S20D60A S20D90A-S20D200A TJ=25℃ Pulse Width=300μs 1% Duty Cycle 100 1000 10000 0.1 1 10 100 JUNCTION CAPACITANCE (pF) A REVERSE VOLTAGE (V) FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG f=1.0MHz Vsig=50mVp-p S20D35A-S20D45A S20D50A-S20D200A 0.1 100 0.01 0.1 1 10 100 TRANSIENT THERMAL IMPEDANCE (℃/W) T-PULSE DURATION. (sec) FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG