S2000N TOSHIBA | Alldatasheet
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TOSHIBA $2000N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS Unit in mm COLOR TV SWITCHING REGULATOR APPLICATIONS 15.5405 03.6403 3.0+0.3 _ 4 of eae} PXEre © High Voltage : VcEg = 1500 V sd | Fla +4 +} 2} 4 e High Speed : te = 0.7 us (Max.) BS) % als ¢ Low Saturation Voltage : VCR (sat) = 5 V (Max.) a" 48) This pido i © Collector Metal (Fin) is Fully Covered with Mold Resin. 4.0 IY | b (AS) Package) zawaxt HY ag MAXIMUM RATINGS (Ta = 25°C) f 5.45 5.05 CHARACTERISTIC SYMBOL | RATING | UNIT || { Collector-Base Voltage Voss | 1500 [| V_ | ai 123 Pa Emitter-Base Voltage VEBO ot | po fw | 8 ” aT 1. ease [Base Current | eT A seer Collector Power Dissipation JEDEC = P Ww (Te = 250) ° * Junction Temperature TOSHIBA _2-16E3A Storage Temperature Range —55~150 - g Weight : 5.5 . ‘Thermal Resistance Rth Go eight : 5.5 (yp) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ way. | rye. [max. unr] Collector Cut-off Current Topo | Vop = 1500V, Van =0 L— )— 11] ma | Emitter-Base Breakdown _ _ ; hye) [Von =5V, Io = 1A [10 | — | 30 | DO Current Gain hre@) [Von =5V,Io=45A [4sf>— | 9] Collector-Emitter Saturation ¥, Ig = 4.54, Ip = 2A {—[- | 1] Vv Voltage CE (sat) [ig = 45A, IR =1A r—-f—|5| Base-Emitter Saturation _ _ toro fe=eeamein [=| oa[ val v Collector-Emitter Sustain L = 40mH, Ip = 500mA Transition Frequency Vcr = 10V, Ic =0.1A [| — | 2] — [Mm] Collector Output Capacitance Vcp =10V,Ig=0,f=iMHz | — | 95[ — | pF | Switching Time|Storage Time Icp=4.5A,Ipi(end)=1A [| — [| 8{ 12 | (Fig.1) Fall Time fy = 15.75 kHz [— [04] o7 | a61001Eaa2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the JOSHIBA' Semiconductor Reliability Handbook 1999-09-02 1/4
TOSHIBA S$2000N Fig.1. SWITCHING TIME TEST CIRCUIT Ic Ip 2802482 10 /H 100 pF = en c Ele 4 | © S 3l| 315 SS s al 100230 TUT.) 34° al of a INPUT S a me) oT g r—) oO g a| oO < 25 ys 7 ps, g mF sTS| ° +r aL Ps “i SRF a 63.5 18 VDD Voc ! al i [*) BASE CURRENT 0 ---+ 4 i fos) i 4 i i i I 90% CP i i COLLECTOR o wnnfene-b tO% CURRENT itstg ite Base Current Gradient Ipi +] dig/dt = —BL~—B2 (4 7,5) tstg Q61001EAA2” @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual Property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 2/4
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