S1WB05 ZSELEC | Alldatasheet
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5.0 At 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V H ig h S u r g e C u r r e n t C a p a b i l i t y G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n Designed for Surface Mount Application MIL-STD-202, Method 208 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Feat ures Low Forward Voltage Drop ! High Current Capability ! Plas tic Material – UL Flammability 94V-O /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M e ch a n i c a l D a t a MIL-STD- 202, Method 208 ! Polarity: As Marked on Case ! Weight: 0.22 grams (approx.) ! Mounting Position: Any ! Marking: Type Number M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RM S Reverse Voltage VR( RMS) Average Rec tified Output Current (Note 1) @TA = 40°C Average Rectified Output Current (Note 2) @TA = 40°C IO 1.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A I 2t Rating for Fusing (t < 8.3ms) I2 2s Forward Voltage per element @I F = 0.5A V FM 1. 0 V P eak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 2.0 500 µA Typi cal Junction Capacitance per leg (Note 3) Cj 13 pF Typi cal Thermal Resistance per leg (Note 1) R/G01JA R/G01JL 20 °C Operating and S torage Temperature Range Tj, TST G -55 t o +150 °C Not e: 1. Mounted on glass epoxy PC board with 1.3mm2 s older pad. 2. Mounted on aluminum substrate PC board with 1.3mm2 s older pad. 1 of 2 ! Le ad Free: For RoHS / Lead Free Version Terminals: Plated Leads Solderable per www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. Sym bol UnitS1Z B S1Z B S1Z B S1Z B S1Z B S1Z B S1Z B 10 20 40 60 80 100 S1WB05 - S1WB100 C a s e : D I P, M o l d e d P l a s t i c /circle6 DE H JK L M BA C G DIP Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E G H 1.30 J 3.80 4.90 K L M All Dimensions in mm 0.90 1.40 5.00 5.20 0.45 0.58 8.12 8.80 2.15 3.40
www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. S1WB05 - S1WB100 S1WB05 - S1WB100 0.01 0.1 1.0 I , INST ANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 11 0 1 00 I , P EAK FORWARD SURGE CURRENT (A) FSM N UM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge C urrent Singl e half-sine-Wave (JEDEC Method) 100 1 10 100 C ,CAP ACITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 6 0 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (µA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125°Cj T = 25°Cj T , AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve A 1.0 0.5 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) (AV) 60 Hz Resistive or Inductive load